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Deep ultraviolet LED based on AlGaN

A deep ultraviolet, N-type technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of poor hole injection effect, low mobility and non-uniform distribution, low radiation recombination rate and internal quantum efficiency, etc. Improve the recombination efficiency, improve the ability to block electron leakage, and inhibit the effect of holes overflowing the active area

Inactive Publication Date: 2018-10-09
SOUTH CHINA NORMAL UNIVERSITY
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AI Technical Summary

Problems solved by technology

Electrons have small effective mass and high mobility, which can easily cross the quantum barrier and EBL
Furthermore, hole injection is poor due to low mobility and non-uniform distribution in quantum wells, which ultimately lead to low radiative recombination rates and internal quantum efficiencies

Method used

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  • Deep ultraviolet LED based on AlGaN
  • Deep ultraviolet LED based on AlGaN
  • Deep ultraviolet LED based on AlGaN

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Embodiment Construction

[0024] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0025] A deep ultraviolet LED based on AlGaN, comprising a substrate 1, an N-type layer 2, a first barrier layer 3, a quantum well active region 4, an insertion layer 5, a second barrier layer 6, and a P-type layer 7 from bottom to top , also includes an n-type ohmic electrode 0 drawn out from the n-type layer 2 and a p-type ohmic electrode 8 drawn out from the p-type layer 7 .

[0026] Since two barrier layers are arranged on both sides of the quantum well active region 4, they have a strong quantum confinement effect on the carriers, which can effectively suppress holes from overflowing the active region 4, and can also block electron leakage, thereby improving the carrier density. The recombination efficiency of flow in the active region 4. In addition, the arrangement of the insertion layer 5 can also greatly improve the ability of the s...

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Abstract

The invention specifically relates to a deep ultraviolet LED based on AlGaN. The deep ultraviolet LED orderly comprises a substrate, a N-type layer, a first barrier layer, a quantum well active area,an insert layer, a second barrier layer and a P-type layer from bottom to top, and further comprises n-type ohmic electrode derived from the N-type layer and a p-type ohmic electrode derived from theP-type layer. Two barrier layers are arranged at two sides of the quantum well active area, so that the deep ultraviolet LED has strong quantum limiting effect on the carrier, and can effectively prevent the hole from overflowing the active area, and can block the electronic current leakage, and the compounding efficiency at the active area by the carrier is improved. Furthermore, the capacity ofblocking the electronic current leakage by the second barrier layer can be greatly improved through the arrangement of the insert layer.

Description

technical field [0001] The invention relates to the field of photodiodes, in particular to an AlGaN-based deep ultraviolet LED. Background technique [0002] AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) have attracted great attention due to their wide range of applications, including covert communication, biological detection, chemical decomposition, sterilization, medical treatment, and optical data storage. [0003] However, DUV LEDs have the problem of a sharp drop in efficiency, which is still a major obstacle to the further application of high-power LEDs. So far, many possible mechanisms have been proposed to explain the drop, such as self-heating effect, inefficient hole injection, electron leakage, Auger recombination, quantum confined Stark effect (QCSE), carrier in the active region uneven distribution and polarization effects. Among the aforementioned factors, electron leakage and non-uniform carrier distribution play an important role in this pr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/06H01L33/14
CPCH01L33/06H01L33/145
Inventor 谷怀民袁瑞
Owner SOUTH CHINA NORMAL UNIVERSITY
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