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Preparation method of tungsten sulfide target material

A technology of tungsten sulfide and target material, which is applied in metal material coating process, ion implantation plating, coating, etc., can solve the problems of low target material preparation density, inability to prepare tungsten sulfide target material, poor stability, etc., and achieve The sputtering process is stable, the number of opening and cleaning is reduced, and the effect of high density

Active Publication Date: 2018-09-28
河北东同光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The present invention provides a method for preparing a tungsten sulfide target in order to solve the problems in the prior art that the preparation density of the target is low, the stability is poor, and the tungsten sulfide target cannot be prepared.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] A. Pretreatment of tungsten sulfide: mix 82% of tungsten sulfide with a purity of ≥99.95%, 15% of molybdenum disulfide powder with a purity of ≥99.95%, and 3% of carbon powder with a purity of ≥99.95% to obtain a mixed material and set aside;

[0024] B. Vacuum hot pressing sintering: Put the above mixture into a mold, place it in a sintering furnace for sintering, control the sintering temperature to 1300°C, sintering pressure to 25MPa, keep the temperature and hold the pressure for 2 hours, after the sintering is completed, cool down to 830°C, remove Press, and when the temperature is lowered to below 150°C, it is released from the furnace to obtain a rough billet;

[0025] C. Finishing: cutting and surface grinding the rough blank obtained in step B to obtain a tungsten sulfide target.

[0026] The grain size of the tungsten sulfide target prepared in the above-mentioned examples is determined to be 78-89 μm, which fundamentally increases the film deposition rate and...

Embodiment 2

[0028] A. Pretreatment of tungsten sulfide: mix 83% of tungsten sulfide with a purity of ≥99.95%, 15% of molybdenum disulfide powder with a purity of ≥99.95%, and 2% of carbon powder with a purity of ≥99.95% to obtain a mixed material for later use;

[0029] B. Vacuum hot pressing sintering: put the above mixture into a mold, place it in a sintering furnace for sintering, control the sintering temperature to 1550°C, and the sintering pressure to 38MPa, keep the temperature and hold the pressure for 5h, after the sintering is completed, cool down to 830°C, remove Press, and when the temperature is lowered to below 150°C, it is released from the furnace to obtain a rough billet;

[0030] C. Finishing: cutting and surface grinding the rough blank obtained in step B to obtain a tungsten sulfide target.

[0031] The grain size of the tungsten sulfide target prepared in the above-mentioned examples is determined to be 76-87 μm, which fundamentally increases the film deposition rate ...

Embodiment 3

[0033] A. Pretreatment of tungsten sulfide: mix 84% of tungsten sulfide with a purity of ≥99.95%, 13% of molybdenum disulfide powder with a purity of ≥99.95%, and 3% of carbon powder with a purity of ≥99.95% to obtain a mixed material for later use;

[0034] B. Vacuum hot pressing sintering: put the above mixture into a mold, place it in a sintering furnace for sintering, control the sintering temperature to 1350°C, and the sintering pressure to 28MPa, and keep the temperature and pressure for 4 hours. After the sintering is completed, cool down to 830°C, remove Press, and when the temperature is lowered to below 150°C, it is released from the furnace to obtain a rough billet;

[0035] C. Finishing: cutting and surface grinding the rough blank obtained in step B to obtain a tungsten sulfide target.

[0036] The grain size of the tungsten sulfide target prepared in the above-mentioned examples is determined to be 77-86 μm, which fundamentally increases the film deposition rate ...

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PUM

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Abstract

The invention relates to a preparation method of a tungsten sulfide target material, and belongs to the technical field of non-metallic target materials. Vacuum hot-pressing sintering is adopted for preparation. The method comprises the following steps of tungsten sulfide pretreatment, wherein tungsten sulfide is mixed with molybdenum disulfide powder and carbon dust to be uniform, and a mixture is obtained for use; vacuum hot-pressing sintering, wherein the mixture obtained in step 1 is loaded into a mold, the mold with the mixture is placed in a sintering furnace for sintering, the sinteringtemperature is controlled to be 1,300-1,550 DEG C, the sintering pressure is controlled to be 25-38 MPa, the temperature and pressure are kept for 2-5 h, after sintering is completed, the temperatureis lowered to range from 810 DEG C to 850 DEG C, the pressure is released, when the temperature is lowered to be 150 DEG C or below, the material is taken out of the furnace, and a rough blank is obtained; finish machining, wherein the rough blank obtained in step 2 is subjected to cutting and plane grinding, and the tungsten sulfide target material is obtained. Accordingly, the method is simple,easy to implement, safe and free of pollution, and fills in the blank of tungsten sulfide target material preparation, and the prepared tungsten sulfide target material is high in density and good instability.

Description

technical field [0001] The invention belongs to the technical field of non-metallic targets, and relates to the preparation of tungsten sulfide, in particular to a method for preparing a tungsten sulfide target. The method prepares a tungsten sulfide target, fills the blank of the tungsten sulfide target, and prepares a tungsten sulfide target. The tungsten sulfide target has high density and good stability. Background technique [0002] At present, most of the world's major target manufacturers are headquartered in the United States, Germany and Japan. The world's major target manufacturers include Tosh SMD, Sumitomo Metal Mining, Honeywell, Hitachi Metals, NikkoMateriaks and other companies. At present, some countries and regions in Asia, such as China Taiwan, South Korea and Singapore, have established more and more factories for manufacturing thin-film components and other products, such as IC, liquid crystal display and optical disc manufacturing plants. For target mat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/547C04B35/622C23C14/34
CPCC04B35/547C04B35/622C04B2235/422C04B2235/446C04B2235/656C04B2235/6567C04B2235/6581C04B2235/77C04B2235/786C23C14/3414
Inventor 康明生崔娜朱辉郄奕张卫李松敏
Owner 河北东同光电科技有限公司
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