Method for manufacturing a semiconductor device and semiconductor device

Abstract

The invention discloses a semiconductor-apparatus manufacturing method and a semiconductor apparatus. The semiconductor-apparatus manufacturing method includes the steps that an epitaxial wafer is coated with first photoresist; exposure and development are carried out on the first photoresist to form openings at a drain metal position, a source metal position and a Y gate position; the epitaxial wafer and the first photoresist are coated with second photoresist; exposure and development are carried out on the second photoresist to form openings at the drain metal position, the source metal position and the Y gate position; metal evaporation sedimentation is carried out, Y gate metal is formed at the Y gate position, and first metal layers are formed at the drain metal position and the source metal position; the first photoresist and the second photoresist are removed through etching. According to the technical scheme, the epitaxial wafer is coated with different pieces of photoresist,the openings are formed in the drain metal position, the source metal position and the Y gate position, when metal evaporation is carried out, metal layers are simultaneously evaporated at the drain metal position, the source metal position and the Y gate position at a time, step procedures of the manufacturing technology are reduced, efficiency is improved, and the cost is also reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor device manufacturing method and a semiconductor device. Background technique [0002] The production process of the Y gate semiconductor device before the present invention is improved is as figure 1 As shown, generally go through the following processes: epitaxial wafer surface treatment and device source / drain metallization process - Y gate bottom photolithography process - Y gate top photolithography process - Y gate metallization deposition process - the first A passivation layer nitride deposition process - the first metal layer deposition process - the second passivation layer nitride deposition process - polymer passivation flat layer process - the second metal layer deposition process - the third passivation Layer nitride deposition process, etc. Each process includes multiple processing processes, such as surface cleaning, exposure a...

AI Technical Summary

Problems solved by technology

[0003] For this reason, it is necessary to provide a semiconductor device manufacturing method and a semiconductor device to solve the problem that there are many manufacturing steps of the existing Y-gate semiconductor

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