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A kind of vertical structure LED chip of double insertion layer reflector structure and preparation method thereof

A LED chip and vertical structure technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as poor thermal stability and poor adhesion of Ag-based reflectors

Active Publication Date: 2020-07-07
HEYUAN CHOICORE PHOTOELECTRIC TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to overcome the deficiencies in the prior art, one of the purposes of the present invention is to provide a vertical structure LED chip with a double-insertion layer reflector structure, which improves the problems of poor adhesion and poor thermal stability of the Ag-based reflector, Significantly improve the process stability and reflectivity of Ag reflectors, thereby improving the yield rate and light output efficiency of vertical structure LED chips

Method used

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  • A kind of vertical structure LED chip of double insertion layer reflector structure and preparation method thereof
  • A kind of vertical structure LED chip of double insertion layer reflector structure and preparation method thereof
  • A kind of vertical structure LED chip of double insertion layer reflector structure and preparation method thereof

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Embodiment 1

[0073] refer to Figure 3-1 , a vertical structure LED chip with double insertion layer reflector structure, its preparation method comprises,

[0074] LED epitaxial wafer growth: first epitaxially grow LED epitaxial wafer 9' on Si substrate, including n-type doped GaN film grown on Si substrate, InGaN / GaN quantum well grown on n-type doped GaN film and The p-type doped GaN thin film grown on the InGaN / GaN quantum well; the Si substrate takes the (111) plane as the epitaxial plane; the thickness of the n-type doped GaN layer is 2 μm; the InGaN / GaN quantum well 8 cycles of InGaN well layer / GaN barrier layer, wherein the thickness of InGaN is 4nm, the thickness of GaN barrier layer is 12nm; the thickness of the p-type doped GaN film is 200nm; the first step of inserting the metal layer into the growth mirror : Electron beam evaporation, magnetron sputtering or thermal evaporation equipment is used on the surface of the LED epitaxial wafer, and the first layer of the evaporation...

Embodiment 2

[0081] refer to Pic 4-1 , a vertical structure LED chip with double insertion layer reflector structure, its preparation method comprises,

[0082] LED epitaxial wafer growth steps: first epitaxially grow LED epitaxial wafer 9" on Si substrate, LED epitaxial wafer 9" includes n-type doped GaN thin film grown on Si substrate, n-type doped GaN thin film grown on n-type doped GaN thin film InGaN / GaN quantum wells and p-type doped GaN films grown on InGaN / GaN quantum wells; the Si substrate takes the (111) plane as the epitaxial plane; the thickness of the n-type doped GaN layer is 2 μm; The InGaN / GaN quantum well is an InGaN well layer / GaN barrier layer with 8 periods, wherein the thickness of InGaN is 4nm, and the thickness of the GaN barrier layer is 12nm; the thickness of the p-type doped GaN film is 200nm;

[0083] The step of growing the reflector first inserting the metal layer: using electron beam evaporation, magnetron sputtering or thermal evaporation equipment on the ...

Embodiment 3

[0090] A vertical structure LED chip with a double-insertion layer reflector structure, the preparation method of which comprises,

[0091] LED epitaxial wafer growth steps: first grow LED epitaxial wafers on Si substrates, LED epitaxial wafers include n-type doped GaN films grown on Si substrates, grow InGaN / GaN quantum wells on n-type doped GaN films and A p-type doped GaN thin film is grown on the InGaN / GaN quantum well; the Si substrate takes the (111) plane as an epitaxial plane; the thickness of the n-type doped GaN layer is 1 μm; the InGaN / GaN quantum well is 4 periods of InGaN well layer / GaN barrier layer, wherein the thickness of InGaN is 7nm, the thickness of GaN barrier layer is 3nm; the thickness of the p-type doped GaN film is 100nm;

[0092] The first step of inserting the metal layer of the growing reflector: using electron beam evaporation, magnetron sputtering or thermal evaporation equipment on the surface of the LED epitaxial wafer, and evaporating the first...

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Abstract

The invention discloses a vertical structure LED chip with a double-insertion-layer reflector structure, which comprises an Si substrate, an LED epitaxial wafer, a reflector first insertion metal layer, a nano Ag reflector and a reflector second insertion metal layer, wherein the LED epitaxial wafer grows on the Si substrate, the reflector first insertion metal layer grows on the surface of the LED epitaxial wafer, the nano Ag reflector grows on the surface of the reflector first insertion metal layer, and the reflector second insertion metal layer grows on the surface of the nano Ag reflector. The invention further provides a preparation method of the vertical structure LED chip with the double-insertion-layer reflector structure. The vertical structure LED chip improves the problems of poor adhesion and poor thermal stability of an Ag-based reflector, greatly improves the process stability of the Ag-based reflector and the reflectivity of the reflector, and thus improves the yield and light output efficiency of the vertical structure LED chip.

Description

technical field [0001] The invention relates to the field of LED manufacturing, in particular to a vertical structure LED chip with a double-insertion layer reflector structure and a preparation method thereof. Background technique [0002] With the gradual application of LEDs in the field of lighting, the market has higher and higher requirements for the light efficiency of white LEDs. GaN-based vertical structure LEDs have single-sided light output, good heat dissipation capabilities, and can withstand large current injection. Such a vertical structure LED chip It can be equivalent to several front-mounted structure chips, and the converted cost is only a fraction of the front-mounted structure. Therefore, GaN-based vertical structure LEDs are the market's direction and an inevitable trend in the development of semiconductor lighting. Compared with the traditional planar structure LED, the vertical structure LED has many advantages: the two electrodes of the vertical struc...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/06H01L33/46H01L33/00
CPCH01L33/007H01L33/06H01L33/46
Inventor 李国强
Owner HEYUAN CHOICORE PHOTOELECTRIC TECH CO LTD
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