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Preparation method of crystalline organic thin film transistor controlled through crystalline solvent

A thin-film transistor and solvent-regulated technology, which is applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve problems such as waste of energy, amorphous films, cumbersome processing operations, etc., to improve efficiency and film-forming performance Good, time and energy saving effect

Inactive Publication Date: 2018-08-17
CHANGCHUN UNIV OF TECH
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Problems solved by technology

[0004] The present invention is a method for preparing a crystalline organic thin film transistor regulated by a crystalline solvent. In the processing method, a crystalline solvent TCB is added on the basis of commonly used organic solvents such as chloroform solvent to make the growth of rubrene organic film crystals change from disorder to order

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  • Preparation method of crystalline organic thin film transistor controlled through crystalline solvent

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Embodiment Construction

[0008] Si / SiO with a size of 1.5 cm × 1.5 cm 2 The base substrate (2) is first wiped with a cotton ball wetted with acetone solution, rinsed with acetone solution after wiping, then wiped with a cotton ball wetted with ethanol solution, rinsed with ethanol solution after wiping, and then rinsed with distilled water. Washed Si / SiO 2 Substrate The substrate (2) was blown dry with nitrogen gas, and dried in an oven at a temperature of 120°C. Treated Si / SiO 2 The base substrate (2) was taken out, and TCB was dissolved in chloroform solvent at a volume fraction of 1% to form a TCB solution (1) and added dropwise to Si / SiO 2 The substrate (2) is placed on the substrate until the solution covers the substrate. After 15 s, when TCB just started to form a small amount of crystals (3), 40 μL of rubrene solution (4) dissolved in chloroform solvent was added dropwise. With the volatilization of the chloroform solvent (5), the TCB first forms a uniform and directional substrate modific...

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Abstract

The invention discloses a preparation method of a crystalline organic thin film transistor controlled through a crystalline solvent, namely a growth method of changing growth of rubrene organic thin film crystal into ordered growth from disordered growth through adding the crystalline solvent 1,3,5-trichorobenzene (TCB) on the basis of a common organic solvent, such as a chloroform solvent. A TCBsolution dissolved into the chloroform solvent is dispensed on a Si / SiO2 substrate, and a rubrene solution dissolved into the chloroform solvent is dropwise added quickly when TCB solution just formscrystal. The TCB firstly forms a uniform directional substrate modification layer on the substrate. Rubrene molecules aggregate and grow on a TCB modification layer to form a rubrene organic semiconductor layer which is the same as a TCB substrate in direction and has high orderliness. An electrode is evaporated on the rubrene semiconductor layer and the organic thin film transistor is finally formed. The crystalline organic thin film transistor is relatively good in film-forming property, simple in operation and low in cost, and has a wide application prospect in the field of organic photoelectronic devices, and energy is saved.

Description

technical field [0001] The invention mainly relates to a preparation method of a crystalline organic thin film transistor regulated by a crystalline solvent, and belongs to the technical field of organic optoelectronics. Background technique [0002] Organic thin-film transistors have attracted more and more attention due to their many advantages of active layer materials and sources, more and more simple thin-film preparation technologies, and flexible manufacturing. For the preparation of thin films in organic thin film transistors, two methods, solution processing and vacuum deposition, are currently mainly used. The vacuum deposition method has the advantages of uniform film formation and controllable thickness, but the operation is complicated and the cost is high. Although solution processing is simple to operate and low in cost, its film formation is amorphous, and the prepared film needs to be regulated by post-operations such as annealing, but the regularity of the...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/40
CPCH10K71/15H10K10/46
Inventor 王丽娟张梁谢强朱阳阳孙强孙丽晶
Owner CHANGCHUN UNIV OF TECH
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