Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Ceramic material SiC whisker suitable for stereolithography, and preparation method thereof

A stereolithography and stereolithography molding technology, applied in the field of additive manufacturing, can solve problems such as anisotropy, and achieve the effects of high molding precision, high manufacturing precision and manufacturing efficiency, and microstructure and designability

Active Publication Date: 2018-08-14
NORTHWESTERN POLYTECHNICAL UNIV
View PDF4 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] In order to avoid the deficiencies of the prior art, the present invention proposes a ceramic material SiC whisker and a preparation method suitable for stereolithography technology, and provides a Preparation of isotropic, three-dimensional network structure SiC whisker porous prefabricated body by stereolithography technology, and then introduced matrix densification by precursor impregnation pyrolysis method (PIP method) to obtain SiC whisker-reinforced SiC ceramic matrix composites method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ceramic material SiC whisker suitable for stereolithography, and preparation method thereof
  • Ceramic material SiC whisker suitable for stereolithography, and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0038] Step 2. Preparation of SiC whisker blank

[0039] The mass fraction is 10-40wt.% of SiC whiskers, 5-10wt.% of UV dispersant (JZA-1101), 5-10wt.% of rheological additives, and 40-80wt.% of photosensitive resin. Mix slurry.

[0040] Use a glass rod to stir and mix the slurry for 5-10 minutes, disperse for 20-40 minutes at the second speed of the homogenizer, and then put it into a ball mill for 2-4 hours. The ratio of material to ball is 3:1-2:1, and the speed is controlled at 400- 500r / min. The distribution of well-dispersed SiC whiskers in the slurry is a three-dimensional network structure with random orientation, so that the formed and solidified SiC whisker preform can be isotropic.

[0041] The mixed slurry with good dispersion and moderate viscosity is subjected to stereolithography molding, and the SiC whisker blank is obtained after molding. Among them, the printing layer thickness is set to the lowest 0.02mm, the number of bottom layers is 1-5 layers, the exp...

Embodiment 1

[0047] Step 1: Pretreatment of SiC whiskers. The SiC whiskers are first heat-treated: the temperature is raised to 1700° C. for 1 hour in a vacuum heat treatment furnace, and then cooled to room temperature. Then carry out pickling: prepare 9wt.% hydrofluoric acid aqueous solution, soak the SiC whiskers for 5 hours, and wash away the hydrofluoric acid until pH=7. Finally, the obtained SiC whiskers were dried in an oven at 150°C.

[0048] Step 2: Preparation of SiC whisker blank. Put 66.4g of photosensitive resin, 18g of SiC whiskers, 8.35g of UV dispersant (JZA-1101), 4.8g of diluent EOEOEA (ethoxy ethoxy ethyl acrylate) into a beaker to form a mixed slurry. Stir with a glass rod for 5 minutes, then disperse for 20 minutes with a homogenizer at the second gear speed, and then pour the mixed slurry into a ball mill jar for ball milling for 2.5 hours, the ratio of material to ball is 2:1, and the speed is 435r / min. Put the fully dispersed mixed slurry in the stereolithography...

Embodiment 2

[0052] Step 1: Pretreatment of SiC whiskers. The SiC whiskers are first heat-treated: the temperature is raised to 1700° C. for 1 hour in a vacuum heat treatment furnace, and then cooled to room temperature. Then carry out pickling: prepare 9wt.% hydrofluoric acid aqueous solution, soak the SiC whiskers for 5 hours, and wash away the hydrofluoric acid until pH=7. Finally, the obtained SiC whiskers were dried in an oven at 150°C.

[0053] Step 2: Preparation of SiC whisker blank. Put 60.5g of photosensitive resin, 10.3g of SiC whiskers, 4.05g of UV dispersant (JZA-1101), and 5.2g of rheology modifier BYK410 into a beaker to form a mixed slurry. Stir with a glass rod for 5 minutes, then disperse for 25 minutes with the second speed of the homogenizer, and then pour the mixed slurry into a ball mill jar for ball milling for 3 hours, the ratio of material to ball is 2:1, and the speed is 425r / min. Put the fully dispersed mixed slurry in the stereolithography molding equipment, ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a ceramic material SiC whisker suitable for stereolithography, and a preparation method thereof. The ceramic material SiC whisker comprises a SiC whisker, photosensitive resin, a dispersant and a rheological assistant. The preparation method comprises the following steps: SiC whisker pretreatment, preparation of a SiC whisker biscuit, dumping of a SiC whisker preform, andpreparation of a SiC matrix. The preparation method has the advantages of high molding precision, uniform and designable microstructure, realization of molding a complex profile member, promotion of the application of the stereolithography technology in the ceramic field, and solving of problems of mold dependence, difficulty in molding the complex profile member and non-uniform microstructure inthe prior art, and the prepared SiC whisker reinforced SiC-CMC material is isotropic, that is, the structure and function characteristics in all directions are basically consistent, so the SiC whiskerreinforced SiC-CMC material has application potential in hot end components for bearing high and complex stress conditions in the aerospace field.

Description

technical field [0001] The invention belongs to the technical field of additive manufacturing, and relates to a ceramic material SiC whisker suitable for stereolithography technology and a preparation method thereof, in particular to a preparation method of stereolithography technology (SLA) combined with precursor impregnation and pyrolysis (PIP) A method for toughening silicon carbide ceramic matrix composites with silicon carbide whiskers. Background technique [0002] Ceramic matrix composites (CMC), especially non-oxide ceramic matrix composites (such as silicon carbide ceramic matrix composites, SiC-CMC), due to their high temperature resistance, high strength, high hardness, high elastic modulus, thermochemical stability, etc. With excellent performance, it has broad application prospects in the aerospace field. The reinforcement of SiC-CMC mainly includes particles, whiskers, chopped fibers and continuous fibers. Among them, CMC using continuous fiber as reinforcem...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/565C04B35/81C04B35/622B28B1/00B28B1/52B33Y70/00B33Y10/00
CPCB28B1/001B28B1/52B33Y10/00B33Y70/00C04B35/806C04B35/571C04B35/622C04B2235/5276C04B2235/616C04B2235/6562C04B2235/6567
Inventor 成来飞吕鑫元叶昉范尚武于树印刘永胜张立同
Owner NORTHWESTERN POLYTECHNICAL UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com