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Anti-ferroelectric ceramic material with high energy storage density and preparation method thereof

A technology of high energy storage density and ceramic materials, applied in the field of high energy storage density antiferroelectric ceramic materials and their preparation, can solve the problems of affecting the energy storage density and reducing the polarization strength of the antiferroelectric ceramics, so as to suppress volatilization, Avoid deviation, high energy storage density effect

Active Publication Date: 2018-08-03
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the segregation of glass powder inside the ceramic, the incorporation of glass powder reduces the polarization strength of antiferroelectric ceramics, which in turn affects the releasable energy storage density under a fixed working electric field.

Method used

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  • Anti-ferroelectric ceramic material with high energy storage density and preparation method thereof
  • Anti-ferroelectric ceramic material with high energy storage density and preparation method thereof
  • Anti-ferroelectric ceramic material with high energy storage density and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] The antiferroelectric ceramic material is composed of: Pb 0.97 La 0.02 (Zr 0.33 sn 0.55 Ti 0.12 )O 3 +5% SiO2 2

[0048] (1) Calculate the required Pb according to the composition of the above chemical formula 3 o 4 , La 2 o 3 , ZrO 2 , SnO 2 、TiO 2 Quality, mixed by wet ball milling method, according to the mass ratio of raw materials: balls: deionized water = 1:1.5:0.8, mixed for 6-8 hours, so that all components are mixed evenly. After drying, pass through a 30-mesh sieve, briquette in an air atmosphere, raise the temperature to 850°C at a rate of 2°C / min, and keep it warm for 3 hours. The synthetic composition is Pb 0.97 La 0.02 (Zr 0.33 sn 0.55 Ti 0.12 )O 3 powder (ceramic powder);

[0049] (2) The finely ground Pb 0.97 La 0.02 (Zr 0.33 sn 0.55 Ti 0.12 )O 3 Add ethanol (C 2 h 5 OH) after ultrasonic dispersion, mixed with tetraethyl silicate to form a mixed solution, according to the molar ratio of ceramic powder: tetraethyl silicate = 100...

Embodiment 2

[0056] The antiferroelectric ceramic material is composed of: Pb 0.97 La 0.02 (Zr 0.33 sn 0.55 Ti 0.12 )O 3 +3%SiO2 2

[0057] Repeat the preparation method of Example 1 according to the above formula, except that steps (2) and (3) are repeated twice before heat treatment. Then, a binder was added to granulate and a green body was prepared, and the obtained green body was sintered at 1220° C. and kept for 2 hours to obtain an antiferroelectric ceramic sample. The sintered ceramic material is smoothed, cleaned, dried, screen-printed with silver paste, dried again, put into a box-type electric furnace to burn silver, and the silver burning condition is 750°C for 30 minutes. An antiferroelectric ceramic sample covered with electrodes was obtained.

[0058] TEM observations were carried out on the coated powder samples, image 3 The surface micro-morphological structure diagram of the powder sample prepared in Example 2 is given. The surface SEM observation of the antife...

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Abstract

The invention provides an anti-ferroelectric ceramic material with high energy storage density and a preparation method thereof. The chemical general formula of the anti-ferroelectric ceramic materialis Pb0.97La0.02[(Zr0.375Sn0.625)1-xTix]O3+a SiO2, wherein x is greater than or equal to 0.1 and less than or equal to 0.15, a is the molar percentage of SiO2 to Pb0.97La0.02[(Zr0.375Sn0.625)1-xTix]O3, and a is greater than or equal to 3% and less than or equal to 5%.

Description

technical field [0001] The invention relates to a high energy storage density antiferroelectric ceramic material and a preparation method thereof, belonging to the technical field of functional ceramic materials. Background technique [0002] Pulse power technology refers to the electrophysical technology that slowly inputs energy of lower power into the energy storage device for a long time, and then releases it to the load with a very high power density in a very short time (Science, 313: 334 -336,2006), widely used in high-tech, civil and other fields. The basic system of pulsed power consists of two parts: one is the energy storage system at low power levels; the other is the generation and efficient transmission of high power pulses to the load. The energy storage system is an important part of the pulse power device. At present, the initial energy is mainly provided in the form of capacitance, inductance, mechanical energy, and chemical energy. Among them, capacitor ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/493C04B35/622
CPCC04B35/493C04B35/622C04B2235/3227C04B2235/3293C04B2235/3418
Inventor 王根水边峰闫世光徐晨洪毛朝梁董显林曹菲
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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