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Preparation method for depositing cadmium telluride-based thin-film stacked solar cell material on silicon-based battery plate

A solar cell, cadmium telluride-based technology, applied in the manufacture of circuits, electrical components, final products, etc., can solve problems affecting power generation efficiency, solar cell materials are prone to cracks, etc., to improve photoelectric conversion efficiency and improve photovoltaic conversion Efficiency, the effect of improving the transmittance

Active Publication Date: 2019-11-26
辽宁太阳能研究应用有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the improvement of its conversion efficiency has always been the top priority of research. The highest solar energy conversion efficiency of ordinary Si materials is 22%, and it is still in the laboratory stage; secondly, solar cell materials are prone to cracks, which affect their power generation efficiency.

Method used

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  • Preparation method for depositing cadmium telluride-based thin-film stacked solar cell material on silicon-based battery plate
  • Preparation method for depositing cadmium telluride-based thin-film stacked solar cell material on silicon-based battery plate
  • Preparation method for depositing cadmium telluride-based thin-film stacked solar cell material on silicon-based battery plate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0060] (1) The ordinary Si-based solar cell substrate is first ultrasonically cleaned with deionized water for 5 minutes, then blow-dried and sent to the magnetron sputtering reaction chamber. The temperature is 1.0×10 -3 Under Pa vacuum conditions, AZO transparent conductive electrodes were deposited on the back of the battery substrate. The process parameters are as follows: argon and oxygen are used as the mixed gas reaction source, the flow ratio of argon and oxygen is 5:1, the purity of reactive sputtering zinc oxide doped aluminum target is 99.9%, the preparation temperature is 100℃, and the preparation time is 30 minutes.

[0061] (2) Continue to prepare TiAlN anti-corrosion protective coating during magnetron sputtering preparation. The process parameters are as follows: nitrogen is used as the gas reaction source, the nitrogen flow is 30 sccm, the purity of the reactive sputtering titanium nitride target and the aluminum target is 99.99%, the preparation temperature is 1...

Embodiment 2

[0066] (1) The ordinary Si-based solar cell substrate is first ultrasonically cleaned with deionized water for 5 minutes, then blow-dried and sent to the magnetron sputtering reaction chamber. The temperature is 1.0×10 -3 Under Pa vacuum conditions, AZO transparent conductive electrodes were deposited on the back of the battery substrate. The process parameters are as follows: argon and oxygen are used as the mixed gas reaction source, the flow ratio of argon and oxygen is 5:1, the purity of reactive sputtering zinc oxide doped aluminum target is 99.9%, the preparation temperature is 150℃, and the preparation time is 30 minutes.

[0067] (2) Continue to prepare TiAlN anti-corrosion protective coating during magnetron sputtering preparation. The process parameters are as follows: nitrogen is used as the gas reaction source, the nitrogen flow is 50 sccm, the purity of the reactive sputtering titanium nitride target and the aluminum target is 99.99%, the preparation temperature is 2...

Embodiment 3

[0072] (1) The ordinary Si-based solar cell substrate is first ultrasonically cleaned with deionized water for 5 minutes, then blow-dried and sent to the magnetron sputtering reaction chamber. The temperature is 1.0×10 -3 Under Pa vacuum conditions, AZO transparent conductive electrodes were deposited on the back of the battery substrate. The process parameter conditions are: argon and oxygen are used as the mixed gas reaction source, the flow ratio of argon and oxygen is 5:1, the purity of reactive sputtering zinc oxide doped aluminum target is 99.9%, the preparation temperature is 200℃, and the preparation time is 30 minutes.

[0073] (2) Continue to prepare TiAlN anti-corrosion protective coating during magnetron sputtering preparation. The process parameter conditions are: nitrogen is used as the gas reaction source, the nitrogen flow is 70 sccm, the purity of the reactive sputtering titanium nitride target and the aluminum target is 99.99%, the preparation temperature is 350...

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Abstract

The invention discloses a preparation method of silicon-based battery panel deposition cadmium telluride film lamination solar battery materials, belongs to the technical field of solar battery protection coating manufacture, and particularly relates to a preparation method of silicon-based battery panel deposition cadmium telluride film lamination solar battery materials. The preparation method includes the steps: 1) cleaning Si-based solar cell substrates by the aid of ion water ultrasonic waves, blow-drying the cleaned Si-based solar cell substrates, and conveying the blow-dried Si-based solar cell substrates into a magnetron sputtering reaction chamber, leading argon and oxygen into the reaction chamber under vacuum conditions, enabling the argon and the oxygen to serve as a mixed gasreaction source, heating the cell substrates, preparing AZO transparent conducting electrodes on the backs of the cell substrates in a deposition manner; 2) leading nitrogen into the magnetron sputtering reaction chamber, enabling the nitrogen to serve as a gas reaction source, heating the cell substrates, continuing deposition to prepare TiAIN films on the cell substrates evaporating the AZO transparent conducting electrodes, and taking the films as corrosion-resistant protection coatings.

Description

Technical field [0001] The invention belongs to the technical field of manufacturing solar cell protective coatings, and in particular relates to a method for preparing a cadmium telluride-based thin film laminated solar cell material deposited on a silicon-based battery plate. Background technique [0002] At present, the solar panels that have been commercialized in large-scale photovoltaic power stations are mainly based on glass-based amorphous silicon or polycrystalline silicon materials. Whether it is polycrystalline silicon or monocrystalline silicon, the technology for preparing solar panels uses solar cell materials. Silicon-based materials are doped to form P-type or N-type, and then coated with various materials to form a solar substrate, which is then extruded and assembled into a solar panel. However, the improvement of its conversion efficiency has always been the top priority of research. The highest solar conversion efficiency of ordinary Si materials is 22%, and ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/0352
CPCH01L31/0352H01L31/18Y02P70/50
Inventor 鞠振河郭睿张东
Owner 辽宁太阳能研究应用有限公司
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