A kind of electrode and its preparation method and application

An electrode and electron transport material technology, applied in circuits, electrical components, electrical solid devices, etc., can solve the problems of device efficiency, impact on carrier injection or transport, etc., to achieve low preparation cost, excellent electron injection performance, technology mature effect

Active Publication Date: 2020-02-11
KUNSHAN GO VISIONOX OPTO ELECTRONICS CO LTD +1
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in practical applications, most of the black electrodes affect the injection or transport of carriers, which in turn has a great impact on the efficiency of the device.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of electrode and its preparation method and application
  • A kind of electrode and its preparation method and application
  • A kind of electrode and its preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043]This embodiment provides an electrode, including a first film layer and a second film layer stacked, the first film layer includes a doped inert metal material Ag and an electron transport material Bphen (formula 5-1), Ag and Bphen together The material formed by doping is recorded as Ag-Bphen, and the mass ratio of Ag and Bphen is 5:95; the thickness of the first film layer is 100 nm. The second film layer is an Al layer with a thickness of 150 nm.

[0044] The preparation method of the electrode comprises the following steps:

[0045] S1, the first film layer is formed by a co-evaporation process, and the evaporation rate of Ag is The evaporation rate of Bphen is

[0046] S2. Form a second film layer on the first film layer by evaporation process, and the evaporation speed is This embodiment also provides a kind of OLED device, and device structure is: ITO (150nm) / NPB (30nm) / Alq 3 (30nm) / Bphen(20nm) / 5%Ag-Bphen(100nm) / A1(150nm).

[0047] Wherein, the first elec...

Embodiment 2

[0055] This embodiment provides an electrode whose structure and preparation method are the same as those in Embodiment 1, except that the inert metal material is Cu.

[0056] This embodiment also provides an OLED device, the structure and preparation method of which are the same as those in Embodiment 1, except that the second electrode is the electrode provided in this embodiment.

Embodiment 3

[0058] This embodiment provides an electrode whose structure and preparation method are the same as those in Embodiment 1, except that the inert metal material is Au.

[0059] This embodiment also provides an OLED device, the structure and preparation method of which are the same as those in Embodiment 1, except that the second electrode is the electrode provided in this embodiment.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
electron work functionaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The present invention relates to the field of organic electroluminescence, and the electrode comprises a first film layer, including a first film layer, and the first film layer comprises at least one inert metal simple substance and such as formula (1) - formula (12) At least one coordination compound formed by at least one electron transport material shown, wherein the electron transport material has coordination ability and contains N∧O and / or N∧N heterocycles. The study found that the inert metal is co-doped with an electron transport material (such as Bphen) with coordination properties, and the electron transport material and the inert metal ion are coordinated to promote the inert metal to lose electrons and reduce its work function, so that the inert metal can achieve the same effect as the active one. The n-type doping effect similar to that of alkali metals improves the transport characteristics of electron transport materials. Therefore, the electrode can not only maintain the high-efficiency n-type doping characteristics of the electrode, but also exhibit better visible light absorption characteristics, and can be used as a good black electrode, thereby improving the display contrast.

Description

technical field [0001] The invention relates to the field of organic electroluminescence, in particular to an electrode and its preparation method and application. Background technique [0002] Organic Light-Emitting Diode (English full name is Organic Light-Emitting Diode, referred to as OLED) is an active light-emitting device. Compared with the thin film transistor liquid crystal display (English full name Liquid Crystal Display, LCD for short) and the plasma display panel (English full name Plasma Display Panel, short PDP) in the existing flat panel display technology, the organic light emitting display device using the organic light emitting diode has high contrast ratio, With the advantages of wide viewing angle, low power consumption, and thinner volume, it is expected to become the mainstream flat panel display technology of the next generation, and it is one of the most concerned technologies in flat panel display technology at present. [0003] For display devices...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/52H01L51/56H01L51/54
CPCH10K85/656H10K85/371H10K85/654H10K85/6574H10K85/657H10K85/6572H10K50/00H10K50/805H10K2102/301H10K71/00
Inventor 段炼宾正杨李梦真
Owner KUNSHAN GO VISIONOX OPTO ELECTRONICS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products