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Heterojunction photovoltaic battery and preparing method thereof

A photovoltaic cell and heterojunction technology, which is applied in photovoltaic power generation, circuits, electrical components, etc., can solve the problems of reducing the photoelectric conversion efficiency of organic and inorganic solar cells, incapable of large-scale application, and long methylation treatment time. , to achieve the effect of improving the photoelectric conversion efficiency, increasing the contact increase, and the method is simple and easy to implement

Active Publication Date: 2018-07-06
诸暨市冬之宝针织有限公司
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  • Claims
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Problems solved by technology

[0003] In the preparation process of organic-inorganic hybrid solar cells, the defect states on the surface of the silicon substrate lead to electron-hole recombination, thereby greatly reducing the photoelectric conversion efficiency of organic-inorganic solar cells. In the prior art, in order to reduce the defect states on the surface of the silicon substrate, usually Methylation is used to form Si-CH3 bonds on the surface of silicon wafers to passivate the silicon surface. On the one hand, there are still a large number of defect states in silicon wafers treated with methylation. On the other hand, the process of methylation treatment is relatively complicated and The basic treatment takes a long time and cannot be applied on a large scale

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  • Heterojunction photovoltaic battery and preparing method thereof
  • Heterojunction photovoltaic battery and preparing method thereof

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preparation example Construction

[0018] A method for preparing a heterojunction photovoltaic cell proposed in a specific embodiment of the present invention includes the following steps:

[0019] (1) Cleaning of n-type silicon wafers: ultrasonically clean n-type silicon wafers in acetone, ethanol, and deionized water for 10-15 minutes, and then place them in concentrated H 2 SO 4 / H 2 o 2 mixed solution and heated to 100-110°C for 50-70 minutes, the concentrated H 2 SO 4 / H 2 o 2 H in the mixed solution 2 SO 4 with H 2 o 2 The volume ratio is 3:1, then rinse the n-type silicon wafer with deionized water, and dry it with nitrogen for standby;

[0020] (2) Prepare a pyramid-structure textured layer on the upper surface of the n-type silicon wafer: place the n-type silicon wafer obtained in step 1 in a mixed solution of NaOH and ethanol, wherein in the mixed solution, the The mass fraction of the NaOH is 4-5%, the volume fraction of the ethanol is 12-15%, etched at 80-90°C for 40-50 minutes to obtain ...

Embodiment 1

[0029] A method for preparing a heterojunction photovoltaic cell, comprising the following steps:

[0030] (1) Cleaning of n-type silicon wafers: ultrasonically clean n-type silicon wafers in acetone, ethanol, and deionized water for 12 minutes, and then place them in concentrated H 2 SO 4 / H 2 o 2 mixed solution and heated to 105°C for 60 minutes, the concentrated H 2 SO 4 / H 2 o 2 H in the mixed solution 2 SO 4 with H 2 o 2 The volume ratio is 3:1, then rinse the n-type silicon wafer with deionized water, and dry it with nitrogen for standby;

[0031] (2) Prepare a pyramid-structure textured layer on the upper surface of the n-type silicon wafer: place the n-type silicon wafer obtained in step 1 in a mixed solution of NaOH and ethanol, wherein in the mixed solution, the The mass fraction of NaOH is 4.5%, the volume fraction of ethanol is 12%, etched at 90°C for 45 minutes to obtain the pyramid structure texture layer, and then the n-type silicon wafer is placed in...

Embodiment 2

[0040] A method for preparing a heterojunction photovoltaic cell, comprising the following steps:

[0041] (1) Cleaning of n-type silicon wafers: ultrasonically clean n-type silicon wafers in acetone, ethanol, and deionized water for 15 minutes, and then place them in concentrated H 2 SO 4 / H 2 o 2 mixed solution and heated to 110°C for 50 minutes, the concentrated H 2 SO 4 / H 2 o 2 H in the mixed solution 2 SO 4 with H 2 o 2 The volume ratio is 3:1, then rinse the n-type silicon wafer with deionized water, and dry it with nitrogen for standby;

[0042] (2) Prepare a pyramid-structure textured layer on the upper surface of the n-type silicon wafer: place the n-type silicon wafer obtained in step 1 in a mixed solution of NaOH and ethanol, wherein in the mixed solution, the The mass fraction of NaOH is 4%, the volume fraction of ethanol is 15%, etched at 85°C for 50 minutes to obtain the pyramid structure texture layer, and then the n-type silicon wafer is placed in h...

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Abstract

The invention provides a heterojunction photovoltaic battery and a preparing method thereof. The method includes the steps of cleaning an n-type silicon wafer, preparing a pyramid-structure suede layer on the upper surface of the n-type silicon wafer, preparing silicon nanowires on the surface of the pyramid-structure in the pyramid-structure suede layer, conducting passivation treatment on the n-type silicon wafer, preparing a molybdenum selenide nanoparticle / Spiro-OMeTAD layer, preparing a PEDOT:PPS layer, preparing a front side silver grid electrode and preparing a back side aluminum electrode, wherein a mixed solution containing potassium hydroxide and aluminum ethoxide is selected for spin-coating in the process of conducting passivation treatment on the n-type silicon wafer, annealing treatment is conducted, the defect mode of the surface of a silicon substrate is effectively reduced, and the photoelectric conversion efficiency of the corresponding heterojunction photovoltaic battery is improved.

Description

technical field [0001] The invention relates to the technical field of photoelectric conversion, in particular to a heterojunction photovoltaic cell and a preparation method thereof. Background technique [0002] Throughout the hundred years of solar cell development, various solar cells have emerged. In terms of the development time of solar cells, solar cells can be divided into three categories: the first generation of solar cells specifically includes monocrystalline silicon solar cells. Silicon solar cells such as batteries, polycrystalline silicon solar cells, and amorphous silicon solar cells; second-generation solar cells specifically include amorphous silicon thin-film solar cells, gallium arsenide solar cells, cadmium telluride solar cells, and copper indium gallium selenide solar cells, etc. Thin-film solar cells; the third-generation solar cells specifically include dye-sensitized solar cells and nanocrystalline solar cells. New solar cells such as organic solar...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/48H01L51/44
CPCH10K30/87H10K30/50Y02E10/549H10K30/35
Inventor 郑伟
Owner 诸暨市冬之宝针织有限公司
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