Method of improving bridging short circuit between metals through film forming machine

Abstract

The invention discloses a method of improving bridging short circuit between metals through a film forming machine. A film forming machine is used. After a metal film is deposited, annealing treatmentis carried out at a high temperature of 400 DEG C in a nitrogen atmosphere, and then, rapid cooling is carried out. According to the method of improving bridging short circuit between metals througha film forming machine, after a metal film is deposited, a high-temperature annealing process is carried out first, and then, rapid cooling is carried out to repair metal layer damage and denaturationcaused by other high-temperature process steps. Thus, subsequent etching is easier, metal residue cannot be easily caused, and the metal bridge defect is improved.

Description

technical field [0001] The invention relates to the field of semiconductor devices and manufacturing, in particular to a method for improving the formation of bridging short circuits between metals through a film forming machine. Background technique [0002] In the process of semiconductor manufacturing process, the formation of metal interconnection is the back-end process of device manufacturing, and the poles of the device or the devices are electrically connected through metal wires. The metal interconnection line is also formed by depositing a metal film layer and then removing the metal layer between the wire patterns through a photolithography definition plus etching process to form a metal line. [0003] In the repair work of PR (photoresist), use the Centura machine to perform surface treatment at a high temperature of 200°C to 300°C, which can improve the relevant characteristics of the current layer, thereby improving the yield rate, but once the silicon wafer is...

AI Technical Summary

Problems solved by technology

[0003] In the repair work of PR (photoresist), use the Centura machine to perform surface treatment at a high temperature of 200°C to 300°C, which can improve the relevant characteristics of the current layer, thereby improving the yield rate, but once the silicon wafer is in the machine cavity The standby time in the chamber is too long, the denaturation of AlCu caused by high temperature, and the precipitation of Cu in AlCu lead to a slow etching rate, so that TiN cannot be etched during metal etching, and TiN remains between metal wires, forming a TiN bridge. (that is, to form a bridge between metals: metalbridge), such as figure 1 As shown, the arrow in the figure refers to the TiN residue formed after etching, forming a metal bridge between the left and right metal wires

This defect causes a short circuit between the wires and the device fails

Images