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808nm semiconductor laser structure of AlGnInP structure

A semiconductor and laser technology, applied in the field of 808nm semiconductor laser structure, can solve the problems of poor electrical parameters and spot repeatability, inconsistent corrosion depth, etc., achieve the effect of larger window, improved consistency, and guaranteed repeatability

Active Publication Date: 2018-06-29
Shandong Huaguang Optoelectronics Co. Ltd.
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] Aiming at the problem of poor repeatability of electrical parameters and light spots caused by the inconsistent corrosion depth of the existing 808nm semiconductor laser with AlGaInP structure when making the ridge structure, the present invention proposes a new semiconductor laser structure with AlGaInP structure;

Method used

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  • 808nm semiconductor laser structure of AlGnInP structure
  • 808nm semiconductor laser structure of AlGnInP structure
  • 808nm semiconductor laser structure of AlGnInP structure

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Embodiment 1

[0035] An 808nm semiconductor laser structure with an AlGaInP structure, from bottom to top is a substrate 1, a buffer layer 2, a lower confinement layer 3, a lower waveguide layer 4, a quantum well 5, an upper waveguide layer 6, a first upper confinement layer 7, a second Two upper confinement layer 9 and ohmic contact layer 10, between the first upper confinement layer 7 and the second upper confinement layer 9, there is a corrosion barrier layer 8 passing through a selective corrosion solution containing Al material. Such as image 3 shown.

[0036] The advantage of the design here is that a corrosion barrier layer is added between the first upper limiting layer and the second upper limiting layer, and the corrosion surface can be cut off by the corrosion barrier layer through the selective etching solution containing Al material during corrosion. The symmetry on both sides of the strip-shaped light-emitting area and the consistency between different batches have been grea...

Embodiment 2

[0040] According to the 808nm semiconductor laser structure of the AlGaInP structure described in Embodiment 1, the difference is that the substrate 1 is a GaAs (100) single crystal substrate with a 15° bias to the crystal direction, and the doping concentration is 3×10 18 cm -3 . The buffer layer 2 is GaAs with a thickness of 200nm and a doping concentration of 1×10 18 cm -3 . The lower confinement layer 3 is (Al 0.2 Ga 0.7 ) 0.5 In 0.5 P, the doping concentration is 1×10 18 cm -3 . The lower waveguide layer 4 is non-doped Ga with a thickness of 500nm 0.5 In 0.5 p. The quantum well 5 is GaAsP with a thickness of 10 nm. The upper waveguide layer 6 is non-doped Ga with a thickness of 500nm 0.5 In 0.5 p. The first upper confinement layer 7 is (Al 0.3 Ga 0.7 ) 0.5 In 0.5 P, the doping concentration is 1×10 18 cm -3 . Corrosion barrier layer 8 is a layer of Ga with a thickness of 10nm 0.5 In 0.5 P, the doping concentration is 1×10 18 cm -3 . The second...

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Abstract

The invention relates to an 808nm semiconductor laser structure of an AlGnInP structure. The semiconductor laser structure comprises a substrate, a buffer layer, a lower limit layer, a lower waveguidelayer, a quantum well, an upper waveguide layer, a first upper limit layer, a second upper limit layer and an ohmic contact layer from bottom to top successively; and a corrosion barrier layer whichcan penetrate an Al material contained selective corrosion solution is arranged between the first upper limit layer and the second upper limit layer. During corrosion, the Al material contained selective corrosion solution can be penetrated, so that a corrosion side is cut off in the corrosion barrier layer. The symmetry of the two sides of a ridged structure and the consistency of different batches are improved greatly.

Description

technical field [0001] The invention relates to an 808nm semiconductor laser structure with an AlGaInP structure, belonging to the technical field of semiconductor lasers. Background technique [0002] Semiconductor lasers are widely used in pumping solid-state lasers, material processing, and laser medical treatment due to their advantages such as compact structure, low cost, and easy control of the optical field. Among them, there are two main types of semiconductor lasers with a wavelength near 808nm. One is used to pump Nd:YAG, and obtain 532nm general green light by frequency doubling. The green light pumped by a low-power laser is generally a few milliwatts to tens of milliwatts, which can be used as an indicator and positioning tool. The market demand is large, and the consistency and cost of mass production are the key. Another type of application is: high-power lasers can be used in laser beauty, physical therapy, material processing, and night market lighting. Th...

Claims

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Application Information

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IPC IPC(8): H01S5/343
CPCH01S5/34326
Inventor 朱振张新徐现刚
Owner Shandong Huaguang Optoelectronics Co. Ltd.
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