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Mushroom array type surface enhanced Raman spectrum active substrate and preparation method thereof

A surface-enhanced Raman and active substrate technology, which is applied in Raman scattering, nanotechnology for materials and surface science, nano-optics, etc. Guaranteed repeatability, enhanced enhancement, reduced spacing

Inactive Publication Date: 2014-06-18
XIAMEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

That is, theoretically, the smaller the spacing of the nanostructures, the higher the enhanced activity. Usually, the spacing of the nanostructures is required to be below 10 nanometers. Structure maintenance, etc.), nanoimprinting technology cannot prepare structure arrays with intervals below 50 nanometers
That is, the enhancement effect of the SERS substrate prepared by nanoimprinting technology is not ideal.

Method used

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  • Mushroom array type surface enhanced Raman spectrum active substrate and preparation method thereof
  • Mushroom array type surface enhanced Raman spectrum active substrate and preparation method thereof
  • Mushroom array type surface enhanced Raman spectrum active substrate and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] Using electron beam evaporation technology, a gold film with a thickness of 200 nm was deposited on the surface of a two-inch diameter circular silicon wafer after standard cleaning. Standard cleaning steps: 1. Prepare H 2 SO 4 :H 2 O 2 = 1:4 solution, put silicon wafers on a quartz boat, and cook for 15 minutes. Wash with hot deionized water, then change to cold deionized water for cleaning. 2. Place the wafer in HF solution (HF:H 2 Soak in O=1:1) for 30 seconds, take out and rinse with deionized water for 15 minutes. 3. With solution (NH 4 OH: H 2 O 2 :H 2 O=1:1:5) Boil cleaning: first heat the deionized water in the beaker to 85℃, pour the corresponding proportion of NH 4 OH and H 2 O 2 solution, boil for 15 minutes, take out and wash with hot deionized water, then change to cold deionized water for washing. 4. Place the wafer in a diluted HF solution (HF:H 2 O=1:20) for 20 seconds, and then rinse with hot deionized water for 15 minutes. 5. Use solutio...

Embodiment 2

[0036] The composite nano-imprint technology was used to imprint an ordered nano-pore-like structure pattern on the surface of the gold film. The diameter of the nano-pore structure was 200 nm and its period was 400 nm:

[0037]Using the Obducat Eitre6 type nanoimprinting system, firstly using hot imprinting technology, with a two-inch nickel template with a nanopore diameter of 200 nm and a period of 400 nm as the master, the surface nanostructures were copied to polydimethylsiloxane by hot imprinting. Then, using UV imprint technology and G3P-8 spin coater, spin-coat TU2-170 nano-imprint glue on the surface of the silicon wafer with 200nm gold film evaporated, and the thickness of the nano-imprint glue is controlled at 200nm , using the polydimethylsiloxane soft film as the master to imprint the surface of the nano-imprinting rubber with UV light, that is, to obtain a nanopore structure with a diameter of 200 nm and a period of 400 nm; and then use an AMS200 plasma etching ma...

Embodiment 3

[0039] Utilize electrochemical method to deposit gold, use galvanostatic method, control deposition electric quantity, deposit gold on the basis of embodiment 2, make the electrodeposited gold grow nano-pore, the shape is like mushroom, specifically:

[0040] Using saturated sodium sulfite solution of sodium gold sulfite, potassium dihydrogen phosphate (9% mass fraction) and sodium citrate (4% mass fraction) as electroplating additives, the effective mass fraction of gold in the solution is 0.2%, and the solution pH is 4.5 , under the condition of 45 ℃, the current density is 2mA / cm2, the nano-imprint glue after UV imprinting is used as the template barrier layer, and CHI760E is used for galvanostatic electrodeposition, and the deposition time is 660s.

[0041] Using Alpha microwave plasma degumming machine to remove the nano-imprint adhesive barrier layer, the surface-enhanced Raman scattering substrate with ordered gold nanostructures was finally obtained;

[0042] Using a Q...

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Abstract

The invention discloses a mushroom array type surface enhanced Raman spectrum active substrate and a preparation method of the mushroom array type surface enhanced Raman spectrum active substrate. The active substrate is a gold or silver mushroom nano-structure array. The preparation method comprises the following steps: impressing a through hole in a photoresist on the surface of a silicon or glass substrate with a gold film by using a nano-impressing technology; then performing electro-deposition to form the mushroom nano-structure array. The mushroom nano-structure array is mainly characterized in that the diameters of mushroom cap parts are 50-300nm; the distance between the caps is 0-50nm. According to the substrate, the enhancement effect of a Raman scattering signal can be greatly improved.

Description

technical field [0001] The invention belongs to the technical field of Raman spectrum detection, and particularly relates to a preparation method of a surface-enhanced Raman active substrate with simple process method, large scale, low cost and high performance. Background technique [0002] In 1928, Indian scientist C.V.Raman observed the phenomenon of inelastic scattering in which the frequency of scattered light changes by using sunlight. This phenomenon is caused by the energy exchange between incident photons and medium molecules, which is related to electron clouds or chemical bonds in the molecules. Raman spectroscopy is a widely used non-destructive testing and molecular identification technology, which can provide fingerprint information of chemical and biomolecular structure. The discovery of Raman phenomenon is of great significance to the scientific community, but the Raman signal is extremely weak. This inherently low sensitivity defect has restricted the appli...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/65B82Y30/00B82Y40/00B82Y20/00
CPCB82Y20/00B82Y30/00B82Y40/00G01N21/658
Inventor 周勇亮樊海涛杨防祖张大霄单洁洁任斌田中群
Owner XIAMEN UNIV
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