Semiconductor component and manufacturing method thereof

A manufacturing method and semiconductor technology, applied in the direction of transistors, etc., can solve problems such as the yield of the manufacturing process, and achieve the effect of ensuring the function and improving the yield of the manufacturing process

Active Publication Date: 2018-06-29
UNITED MICROELECTRONICS CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] As the integration level of DRAM increases, the overlay margin between the contact plug structure and the bit line used to provide the electrical connection of the storage electrode in the COB decreases accordingly, in other words, it causes a problem of manufacturing process yield.

Method used

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  • Semiconductor component and manufacturing method thereof
  • Semiconductor component and manufacturing method thereof
  • Semiconductor component and manufacturing method thereof

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Embodiment Construction

[0043] Those familiar with this technology should understand that the following provides a number of different embodiments to disclose different features of the present invention, but not limited thereto. In addition, the drawings disclosed below are simplified to express the features of the present invention more clearly, so the drawings disclosed below do not show all the elements of a specified element (or device). In addition, the drawings disclosed below are idealized schematic diagrams according to the present invention, so variations from these schematic diagrams, such as differences caused by manufacturing techniques and or tolerances, are predictable. Therefore, the disclosure of the present invention should not be limited to the specific shapes disclosed in the accompanying drawings, but should also include deviations in shapes caused by manufacturing techniques.

[0044] In addition, those familiar with the technology should understand that in the following descript...

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Abstract

The invention discloses a semiconductor component and a manufacturing method thereof. The semiconductor component comprises a substrate which defines at least one storage area, a mesh type isolation structure formed on the substrate and storage electrode contact plugs. Multiple storage units are arranged in the storage area. The mesh type isolation structure comprises multiple basically homogeneous dielectric sidewalls and first openings defined by the dielectric sidewalls. The storage electrode contact plugs are arranged in the first openings and electrically connected with the storage unitsrespectively.

Description

technical field [0001] The invention relates to a semiconductor element and a manufacturing method thereof, in particular to a semiconductor memory element and a manufacturing method thereof. Background technique [0002] Dynamic random access memory (DRAM for short hereinafter) is a main volatile memory, and is an indispensable key component in many electronic products. DRAM is composed of a large number of memory cells to form an array area for storing data, and each memory cell is composed of a metal oxide semiconductor (MOS) transistor and a capacitor. Composed in series. [0003] The capacitor is electrically connected to the conductive structure formed in the electrode contact hole (node ​​contact) through the storage electrode (storage node), and forms a one-bit access path with the drain of the MOS transistor to achieve the purpose of storing or outputting data . With the improvement of the DRAM integration level, it is necessary to reduce the area occupied by the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/108
CPCH10B12/01H10B12/00H10B12/34H10B12/315H10B12/0335H10B12/053H10B12/482
Inventor 冯立伟王嫈乔林裕杰何建廷
Owner UNITED MICROELECTRONICS CORP
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