Preparation method of aluminum nitride thick film with high heat conductivity and high heat dissipation properties

Abstract

The invention discloses a preparation method of an aluminum nitride thick film with high heat conductivity and high heat dissipation properties. In the method, pure aluminum is selected as a cathode target, the purity of the aluminum target is 99.99%, pure nitrogen is adopted as reaction gas, the purity of nitrogen is 99.999%, and aluminum ions obtained through ionization react with nitrogen to form an A1N high-heat-conductivity film. The method comprises the implementation steps that 1, a workpiece substrate is cleaned, dried and placed into a sample chamber, vacuum pumping is carried out, and the vacuum degree needs to be controlled below 9*10<-3>Pa in order to obtain a high-quality aluminum nitride coating; 2, high-purity Ar gas is led in for carrying out sputtering cleaning; 3, argon leading, arc starting, negative bias adding and nitrogen leading are carried out, nitrogen pressure is 1-3*10<-1>Pa, and pre-bombardment cleaning is carried out under the negative bias of 250 V-650 V for 10-180 min. The aluminum nitride thick film can be deposited on the surface of a complex sample, and the film layer preparation method is most widely applied to the engineering technical field. Themethod is simple, operation is easy, the technology is practical, and the method is suitable for industrial production. The prepared aluminum nitride thick film is uniform in ratio, low in nitrogen content and high in heat conductivity.

Description

technical field [0001] The invention relates to a method for preparing an aluminum nitride thick film with high thermal conductivity and high heat dissipation performance, and the method is suitable for many fields such as electronic measuring instruments, computer equipment, measurement and control systems, aircrafts, and precision weapons. The invention belongs to the technical field of surface coating preparation and application. Background technique [0002] With the continuous advancement of science and technology, the emergence and widespread popularization of electronic equipment, computers and household appliances have made electronic devices highly integrated and large-capacity, which has increasingly seriously affected the safe use of circuits. Especially with the prolongation of the working time, the temperature rises due to the heating of the device. The temperature rise will easily cause the working temperature of the electronic device to rise rapidly, the accur...

AI Technical Summary

Problems solved by technology

This method mainly solves the problems that the existing technology cannot prepare aluminum nitride thick films, the deposition speed is slow, and it is difficult to commercialize.