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Constant-current device and manufacturing method thereof

A technology of constant current devices and manufacturing methods, applied to semiconductor devices, electrical components, transistors, etc., to achieve the effects of saving chip area, strong constant current capability, and stable current value

Inactive Publication Date: 2018-06-15
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Aiming at the problem of reverse conduction of existing constant current devices, the present invention proposes a constant current device and its manufacturing method

Method used

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  • Constant-current device and manufacturing method thereof
  • Constant-current device and manufacturing method thereof
  • Constant-current device and manufacturing method thereof

Examples

Experimental program
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Embodiment 1

[0062] Such as Figure 4 As shown, a constant current device includes two parts: a cell area and a terminal area. The cell area includes a plurality of cells 1(1), 1(2)...1(e) with the same structure and sequentially connected , each cell includes a P-type doped substrate 2, an N-type epitaxial layer 3, and a diffused P-type well region 4 located in the N-type epitaxial layer 3. The diffused P-type well region 4 is two and located respectively At both ends of each cell, the first P-type heavily doped region 5 and the N-type heavily doped region 7 located in the diffused P-type well region 4, the first P-type heavily doped region 5 is located in the N-type heavily doped region On both sides of the impurity region 7, a first oxide layer 10 is provided on the upper surface of the N-type epitaxial layer 3 and the diffused P-type well region 4, and an N-type consumption layer is arranged between the upper surface of the diffused P-type well region 4 and the first oxide layer 10. T...

Embodiment 2

[0067] Such as Figure 5 As shown, the difference between this embodiment and Embodiment 1 is that: the terminal region includes a P-type doped region 21 formed around the groove by thermal process after the groove implantation.

[0068] The manufacturing method of the constant current device: the constant current device introduces a groove in the terminal region, and performs P-type impurity implantation around the groove to form a P-type doped region 21, so that the cell region and the device edge defect Phase isolation is achieved by PN junction isolation to achieve forward constant current and reverse high voltage resistance.

[0069] The manufacturing method of the constant current device specifically includes the following steps:

[0070] Step 1: using a P-type silicon wafer as a P-type doped substrate 2;

[0071] Step 2: performing N-type doped epitaxy on the P-type doped substrate 2;

[0072] Step 3: Etching a deep groove in the terminal area of ​​the epitaxial wafe...

Embodiment 3

[0107] As shown in FIG. 9 (1)-(9), the manufacturing method of the constant current device provided by this embodiment, compared with FIG. 8, FIG. 9 omits the slot injection, and directly fills the slot with a medium.

[0108] The initial silicon wafer is epitaxy with one side as the front side, and then the terminal area is processed, including ring implantation, deep groove etching, groove side wall implantation, thick field oxygen in the growth groove and the upper surface of the terminal area, etc.; then, the junction is pushed to form a diffusion P-type well region; after pre-oxidation, perform channel adjustment implantation to form a surface depletion channel, then perform N-type heavily doped implantation, P-type heavily doped implantation, etch the redundant oxide layer; then deposit the oxide layer on the front side, Metal layer and passivation; then perform P-type heavily doped back implant; finally deposit metal layer and passivation on the back.

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Abstract

The invention provides a constant-current device and a manufacturing method thereof. The constant-current device comprises a cell area and a terminal area. The cell area includes a plurality of cellsthat have same structures and are connected successively; each cell consists of a P type doped substrate, an N type epitaxial layer and diffusion P type well regions. The terminal area includes secondoxide layers arranged at the sidewalls and bottoms of grooves, mediums filling the gaps in the grooves, and thick field oxide layers arranged on the upper surfaces of the N type epitaxial layers. According to the invention, the cell area and the edge defect are separated by means of groove injection to form a PN junction, so that a problem that the reversed-direction voltage withstanding is not realized due to the PN junction edge defect of the substrate is solved. The constant-current device realizes terminal isolation by means of groove injection to form a PN junction and the isolation hashigh reliability; the PN node bears the voltage withstanding when the backward voltage is applied; and the oxide layer quality requirement of the groove bottom and the groove side wall is low. Grooveinjection is not needed while the groove quality is high; and the oxide layer in the groove withstands the voltage.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a constant current device and a manufacturing method thereof. Background technique [0002] The constant current source is a commonly used electronic equipment and device, and it is widely used in electronic circuits. The constant current source is used to protect the entire circuit, even if the voltage is unstable or the load resistance changes greatly, it can ensure the stability of the supply current. A constant current diode (CRD, Current Regulative Diode) is a semiconductor constant current device, which uses a two-terminal junction field effect transistor as a constant current source instead of an ordinary constant current composed of multiple components such as transistors, voltage regulator tubes, and resistors. The source can maintain a constant current value within a certain working range. When it works in the forward direction, it is a constant curr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/73H01L29/06H01L27/082
CPCH01L27/082H01L29/0684H01L29/73H01L21/762
Inventor 乔明肖家木赖春兰李路方冬张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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