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Constant current device and manufacturing method thereof

A technology of constant current device and manufacturing method, applied in semiconductor/solid-state device manufacturing, semiconductor device, electrical components and other directions, to achieve the effect of simple manufacturing process, increased flexibility, and saving chip area

Inactive Publication Date: 2018-05-25
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Aiming at the problem of reverse conduction of existing constant current devices, the present invention proposes a constant current device and its manufacturing method

Method used

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  • Constant current device and manufacturing method thereof
  • Constant current device and manufacturing method thereof
  • Constant current device and manufacturing method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0080] A constant current device, including a plurality of cells with the same structure and sequentially connected, each cell includes a P-type heavily doped substrate 2, an N-type doped epitaxial layer 3, and is located in the N-type doped epitaxial layer 3 The diffused P-type well region 4, the diffused P-type well region 4 is two and respectively located at both ends of each cell, the first P-type heavily doped region 5 and N located inside the diffused P-type well region 4 Type heavily doped region 7, the first P type heavily doped region 5 is located on both sides of the N type heavily doped region 7, an oxide layer 10 is provided on the upper surface of the N type doped epitaxial layer 3 and the diffused P type well region 4, The cell also includes a metal cathode 9 covering the entire upper surface of the cell, a metal anode 8 located on the lower surface of the P-type heavily doped substrate 2, the first P-type heavily doped region 5, the N-type heavily doped region 7 ...

Embodiment 2

[0099] Such as Figure 8 As shown, the difference between this embodiment and Embodiment 1 is that the constant current device also includes a P-type doped ring region 41 located at the inner edge of the cell region, and a diffused P-type well region 4 and a P-type well region at the outermost edge of the entire device. The doped ring region 41 is connected as a whole.

[0100] In this embodiment, there is no dielectric 13 inside the deep dielectric trench 12 for filling the gap of the oxide layer in the trench.

[0101] As shown in FIG. 7(1)-(9), FIG. 7 is a schematic flow chart of the manufacturing method of the constant current device provided in this embodiment. Among them, (1) is the initial silicon wafer; (2) is the silicon wafer after N-type doped epitaxy on the front side; (3) is etching a deep groove in the end area of ​​the epitaxial wafer; (4) is performing P-type Impurity implantation; (5) Thick field oxygen and inner wall of the groove for the growth terminal re...

Embodiment 3

[0103] Such as Figure 4 As shown, the difference between this embodiment and Embodiment 3 is that: the dielectric deep groove 12 is provided with a dielectric 13 for filling the gap of the oxide layer in the groove.

[0104] Further, in the constant current device, in addition to polysilicon, other filling materials, such as silicon, silicon dioxide, etc., are used to fill the oxide layer gap in the groove, and it is even possible not to fill the oxide layer gap in the groove, that is, to fill The thing is air.

[0105] As a preferred manner, each doping type in the constant current device is correspondingly changed to opposite doping, that is, when P-type doping changes to N-type doping, N-type doping changes to P-type doping.

[0106] As a preferred manner, the semiconductor material used in the constant current device is silicon or silicon carbide.

[0107] Further, the P-type doped ring region 41 in the constant current device can be one or more according to the differe...

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Abstract

The invention provides a constant current device and a manufacturing method thereof. The constant current device comprises multiple cells which are of the same structure and are connected in sequence,and each cell comprises a P-type doping substrate, an N-type epitaxial layer and a diffusion P-type well region, and further comprises a dielectric deep groove in an N-type doping epitaxial layer, aP-type doping area and an N-type depletion channel area, and the dielectric deep grooves and the P-type doping areas which are located at the bottoms of the dielectric deep grooves make the side wallsof the device isolated. By means of the constant current device, the device cell area and the edge defects are isolated by introducing a groove terminal, and thus the problem that the reverse side isnot resistant to voltage due to edge defects of substrate PN joints is solved; by perpendicularly injecting the PN joints in the grooves, the groove terminal is combined with a PN joint terminal, andterminal isolation is achieved on the condition that the epitaxial thickness is large; N-type doping re-epitaxy is injected into a substrate active area, drive-in is conducted in the N-type doping epitaxial layer to form the diffusion P-type well regions, and a conducting channel is formed between two diffusion P-type well regions. The manufacturing technology is simple, and the cost is low.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a constant current device and a manufacturing method thereof. Background technique [0002] The constant current source is a commonly used electronic equipment and device, and it is widely used in electronic circuits. The constant current source is used to protect the entire circuit, even if the voltage is unstable or the load resistance changes greatly, it can ensure the stability of the supply current. A constant current diode (CRD, Current Regulative Diode) is a semiconductor constant current device, which uses a two-terminal junction field effect transistor as a constant current source instead of an ordinary constant current composed of multiple components such as transistors, voltage regulator tubes, and resistors. The source can maintain a constant current value within a certain working range. When it works in the forward direction, it is a constant curr...

Claims

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Application Information

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IPC IPC(8): H01L29/06H01L29/739H01L21/331
CPCH01L29/0619H01L29/66356H01L29/7391
Inventor 乔明赖春兰肖家木李路方冬张波
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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