Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Silicon briquette machining method

A processing method and technology for silicon blocks, which are applied to the processing of silicon blocks and ingot polycrystalline processing, can solve the problems of large fluctuations in cutting quality, waste of silicon materials and steel wires, and increased costs, so as to solve the problems of diamond wear and fall off, The effect of comprehensive wire reduction and good processing quality

Pending Publication Date: 2018-06-15
LUOYANG CSI PHOTOVOLTAIC TECH CO LTD
View PDF6 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the existing technology is used for normal slicing, the hardness of the silicon rods is not classified. Silicon rods of different hardness are bonded together, the diamond wear on the diamond wire is inconsistent, and the cutting quality fluctuates greatly. In severe cases, it will cause overcutting and wire breakage and other abnormalities, resulting in the waste of silicon materials and steel wires, increasing the cost

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Silicon briquette machining method
  • Silicon briquette machining method
  • Silicon briquette machining method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] First, select the G6 ingot, and cut the polycrystalline ingot to obtain 36 silicon square rods of the same size (for a schematic diagram, see figure 1 , A, B and C series labels in the figure indicate that the contact surfaces with the crucible during ingot preparation are two surfaces, one surface and zero surface respectively).

[0053] A1

B2

B3

B4

B5

A6

B7

C8

C9

C10

C11

B12

B13

C14

C15

C16

C17

B18

B19

C20

C21

C22

C23

B24

B25

C26

C27

C28

C29

B30

A31

B32

B33

B34

B35

A36

[0054] Secondly, the micro-Vickers hardness of the above 36 silicon rods was respectively tested using a Vickers micro-hardness tester.

[0055] Again, the square bars are classified according to the test values ​​of the above 36 square bars (see Table 2 for details).

[0056] Then, formulate the corresponding cutting process according to the hardness classification (s...

Embodiment 2

[0069] Except for the following content, other content is identical with embodiment 1:

[0070] After the cutting is completed, the steps of mechanical energy degumming, cleaning and sorting are carried out to complete the processing of polycrystalline diamond wire slices.

[0071] This embodiment also has excellent effects similar to those of Embodiment 1, and the obtained slices are of high quality and have less overall wire consumption.

Embodiment 3

[0073] The hardness of the G6 ingot is detected by conventional methods in the prior art, and then a corresponding cutting process is specified according to the hardness value to perform diamond wire slicing.

[0074] The relationship between cutting process and ingot hardness is as follows:

[0075] If the hardness of the ingot is less than 1050HV, the cutting time is 1h-1.5h, and the consumption of diamond wire for cutting is 2.8km / knife-3.2km / knife;

[0076] If the hardness of the ingot is 1050HV-1125HV, the cutting time is greater than 1.5h and less than 2h, and the consumption of diamond wire for cutting is greater than 3.2km / knife and less than 3.8km / knife;

[0077] If the hardness of the ingot is greater than 1125HV and less than or equal to 1250HV, the cutting time is 2h-3h, and the consumption of diamond wire for cutting is 3.8km / knife-4.5km / knife;

[0078] If the hardness of the ingot is >1250HV, the cutting time is >3h, and the consumption of diamond wire for cutti...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Hardnessaaaaaaaaaa
Hardnessaaaaaaaaaa
Hardnessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a silicon briquette machining method. The method comprises a step of cutting silicon briquettes by adopting a diamond wire slicing method, wherein the silicon briquettes are cut by adopting different cutting processes according to difference of the hardness of the silicon briquettes; and the cutting processes mainly represent the time spent in cutting and the amount of diamond wires consumed for cutting. According to the method disclosed by the invention, the hardness of the silicon briquettes is classified; corresponding cutting wire techniques are adopted according todifferent types of silicon briquettes so as to prevent uneven diamond abrasion caused by different hardness of silicon rods, thus the cutting yield and even the reject ratio of broken wires are not affected, the amount of comprehensive used wires for polycrystalline diamond wire slicing is reduced, the cutting yield is increased, and thus the polycrystalline diamond wire slicing cost is lowered.

Description

technical field [0001] The invention relates to the technical field of silicon wafer processing, in particular to a method for processing silicon blocks, in particular to a method for processing polycrystalline ingots. Background technique [0002] As the energy crisis and environmental problems such as smog and greenhouse effect become more and more serious, energy transformation is imminent. Due to the advantages of clean, pollution-free and large reserves of photovoltaic energy, the photovoltaic industry has received strong support from governments of various countries, has made great progress in technology, and has been more and more widely used. Solar energy has become one of the most promising new energy sources today. . [0003] In the past ten years, with the escalation of photovoltaic trade disputes and market fluctuations, the photovoltaic industry has experienced overcapacity, but the market demand for photovoltaic clean energy will continue to increase steadily,...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): B28D5/04B28D7/00
CPCB28D5/0058B28D5/045
Inventor 李飞龙谷宁宁熊震朱军邢国强
Owner LUOYANG CSI PHOTOVOLTAIC TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com