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A cutting method for reducing diamond wire loss by multi-wire cutting of crystalline silicon

A multi-wire cutting and cutting method technology, applied in fine working devices, manufacturing tools, stone processing equipment, etc., can solve the problems of weak cutting force, reduced cutting time, high wire consumption, etc. Cost and loss reduction effect

Active Publication Date: 2022-07-26
乐山高测新能源科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the technology of the industry is upgraded, and the diamond wire special machine is generally used for silicon wafer processing. The busbar 55μm diamond wire is used for cutting, and if the wire mesh is cut from right to left, the new wire is used to feed the knife, and the old wire is used in the middle. It is an old thread. If so, the old thread is used in the middle, and the cutting force is not strong, which will lead to the inability to cut quickly, resulting in reduced cutting time, and the problem of thread consumption has been high.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] The specific operation process includes the following steps:

[0030] Set the zero point: the coordinate of the starting position of the silicon rod to cut is -0.5mm, and the coordinate of the silicon rod gradually increases as the cutting starts to press down the silicon rod. The staff stood on the side of the silicon rod and watched the gap between the silicon rod and the wire mesh, and ensured that the wire mesh at the zero point was completely opaque (the head and tail of the silicon rod were completely opaque), the light passing through the -0.5mm position was more The more the better (the bigger the gap, the better, make sure the wire mesh is completely away from the silicon rod).

[0031] Set the spray method: the spray method adopts the form of overflow pipe, and the height of the lower end of the overflow pipe is 5-7mm from the wire mesh. In this embodiment, the height of the lower end of the overflow pipe from the wire mesh is set to 5 mm.

[0032] The wire ...

Embodiment 2

[0040] The specific operation process includes the following steps:

[0041] Set the zero point: the coordinate of the starting position of the silicon rod to cut is -0.5mm, and the coordinate of the silicon rod gradually increases as the cutting starts to press down the silicon rod. The staff stood on the side of the silicon rod and watched the gap between the silicon rod and the wire mesh, and ensured that the wire mesh at the zero point was completely opaque (the head and tail of the silicon rod were completely opaque), the light passing through the -0.5mm position was more The more the better (the bigger the gap, the better, make sure the wire mesh is completely away from the silicon rod).

[0042] Set the spray method: the spray method adopts the form of overflow pipe, and the lower end of the overflow pipe is 7mm from the height of the wire mesh.

[0043] The wire mesh in the first cutting process is between 0 and 110 mm from the zero point, and the wire mesh in the sec...

Embodiment 3

[0051] The specific operation process includes the following steps:

[0052] Set the zero point: the coordinates of the starting position of the silicon rod to cut is -0.5mm, and the coordinates of the silicon rod gradually increase as the cutting starts to press down the silicon rod. The staff stood on the side of the silicon rod and watched the gap between the silicon rod and the wire mesh, and ensured that the wire mesh at the zero point was completely opaque (the head and tail of the silicon rod were completely opaque), the light passing through the -0.5mm position was more The more the better (the bigger the gap, the better, make sure the wire mesh is completely away from the silicon rod).

[0053] Set the spray method: the spray method adopts the form of overflow pipe, and the lower end of the overflow pipe is 6mm from the height of the wire mesh.

[0054] The wire mesh in the first cutting process is between 0 and 110 mm from the zero point, and the wire mesh in the se...

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Abstract

The invention discloses a cutting method for reducing diamond wire loss by multi-wire cutting of crystalline silicon, which belongs to the technical field of crystalline silicon processing. The amount of incoming wire in the first cutting process is greater than the amount of returning wire, and the amount of incoming wire in the second cutting process is less than the length of the returning wire. The first and second cutting processes use the diamond wire that has been used to realize the reuse of the diamond wire. Reduce the loss of diamond wire, reduce the cost of multi-wire cutting, and have broad market prospects.

Description

technical field [0001] The invention belongs to the technical field of crystalline silicon processing, in particular to a cutting method for reducing diamond wire loss by crystalline silicon multi-wire cutting. Background technique [0002] At present, silicon wafer is the most important material for making solar cells. With the continuous development of photovoltaic technology, silicon wafer adopts multi-wire cutting process. The multi-wire cutting device includes two horizontally distributed cutting rolls on the left and the right cutting roll. The cutting rolls have wire grooves and are covered with wire meshes. The gold steel wire enters the wire along the left wire end of the cutting roll, fills the two main rolls along the wire groove, and exits from the steel wire outlet end on the right side of the cutting roll. After the steel wire comes out from the incoming and outgoing ends, it is connected to the control device for taking up and paying off the diamond wire thro...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B28D5/04
CPCB28D5/045
Inventor 唐亮邢旭李璐刘云强
Owner 乐山高测新能源科技有限公司
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