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Transistor-based radiation effect on-line test system and test method thereof

An on-line test and radiation effect technology, applied in the field of radiation effect test, to achieve high-efficiency collection, quantity reduction, and real-time data processing

Inactive Publication Date: 2018-06-12
INST OF NUCLEAR PHYSICS & CHEM CHINA ACADEMY OF
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Problems solved by technology

When using it to study the damage effect of neutron irradiation, in order to determine the difference in damage caused by the same neutron fluence to electronic components and materials under different radiation modes (transient and steady state), the effect of electronic components is monitored online It is necessary to develop an online measurement system for radiation effect parameters to provide necessary means for the analysis of sensitive parameters and laws of neutron radiation effects, but there is no online measurement of radiation effect parameters system exists

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  • Transistor-based radiation effect on-line test system and test method thereof
  • Transistor-based radiation effect on-line test system and test method thereof
  • Transistor-based radiation effect on-line test system and test method thereof

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Embodiment Construction

[0044] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below with reference to the accompanying drawings and examples.

[0045] 1 Radiation damage mechanism of transistors;

[0046] 1.1 The effect of radiation on the performance of bipolar transistors;

[0047]Both neutron irradiation and γ-ray irradiation will cause the DC gain h of the bipolar transistor FE The drop and leakage current increase, but the degree of influence of neutron radiation is greater, and the mechanism of action of the two is different. The influence of neutron radiation on bipolar transistors is closely related to the operating current, operating frequency, base width, and doping concentration of low-doped regions of the device. Under the condition of small injection, the effect of minority carrier recombination on the device DC gain h FE Plays a dominant role, so radiation has a significant imp...

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Abstract

The invention discloses a transistor-based radiation effect on-line test system and a test method thereof. The test system comprises a test circuit, an industrial personal computer, a shielding cableand an irradiation board. Based on the linear relation between the direct-current gain of a transistor and the injection amount of illuminated neutrons, the transistor is adopted as an irradiation effect parameter measurement detector, and then an irradiation effect parameter online test system is built. Based on a CFBR-II reactor and a cobalt source, the test system is verified by respectively performing the injury heterogeneity test in transient-state and steady-state different irradiation modes and the injury equivalence test for different irradiation sequences of neutron and gamma. In thisway, the real-time measurement of sample effect parameters under the transient-state irradiation condition and the steady-state irradiation condition is realized. According to the invention, the testsystem fully realizes the advantages of a virtual instrument, such as flexibility, universality, expandability, powerful software function and the like. The number of peripheral hardware is reduced as much as possible. On the premise that hardware equipment and the wire connecting condition are not changed at all, the drawing of various transistor characteristic curves and the testing of parameters can be realized only through changing the software program.

Description

technical field [0001] The invention relates to the technical field of radiation effect testing, in particular to a transistor-based radiation effect online testing system and a testing method thereof. Background technique [0002] In the experimental study of neutron radiation effects, the damage of electronic components after neutron irradiation is not only related to neutron fluence, but also related to neutron energy and neutron interaction time. The neutron energy spectrum and neutron action time produced by a nuclear explosion are different from those in a steady-state irradiation environment. Under the same neutron fluence, the damage to electronic components and materials different. In order to study the difference in damage, it is very important to determine the equivalent relationship of radiation damage between different radiation sources. [0003] The CFBR-II fast neutron critical device is an important experimental platform for the verification and assessment ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/28
CPCG01R31/28
Inventor 鲁艺邱东荣茹邹德慧
Owner INST OF NUCLEAR PHYSICS & CHEM CHINA ACADEMY OF
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