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A kind of magnetic film material with perpendicular magnetic anisotropy and its preparation method

An anisotropic and magnetic thin film technology, applied in the direction of magnetic thin film, magnetic film to substrate application, magnetic objects, etc., can solve the problems of disappearance and reduction of perpendicular magnetic anisotropy of thin film materials

Active Publication Date: 2020-07-03
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, when the annealing temperature exceeds 300 °C, the perpendicular magnetic anisotropy of the film material will decrease or even disappear due to Ta diffusion

Method used

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  • A kind of magnetic film material with perpendicular magnetic anisotropy and its preparation method
  • A kind of magnetic film material with perpendicular magnetic anisotropy and its preparation method
  • A kind of magnetic film material with perpendicular magnetic anisotropy and its preparation method

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preparation example Construction

[0031] Another object of the present invention is to provide a method for preparing the above-mentioned magnetic thin film material, which specifically includes the following steps:

[0032] Step 1: Select the base material and clean it;

[0033] Step 2: Co-sputtering method is used to deposit Ta and a semi-metallic element alloy compound deposited on the base material processed in step 1 as a buffer layer,

[0034] Step 3: Deposit Co / Pt (Pd, Ir, Au), Fe / Pt (Pd, Ir, Au), Pt / Co / MO, Pt / Fe / MO, CoFeB / MO on the buffer layer (MO is Multilayer films of metal oxides (such as MgO, AlOx, etc.);

[0035] Step 4: Co-sputtering method is used to deposit Ta and semi-metallic element alloy compounds deposited on Co / Pt (Pd, Ir, Au), Fe / Pt (Pd, Ir, Au), Pt / Co / MO, Pt / Fe / MO, CoFeB / MO (MO is a metal oxide such as MgO, AlOx) multilayer film as a protective layer;

[0036] Step 5: Combine the alloy compound of Ta and semimetal elements (such as B, Si, As, Sb, Te, Po) prepared above (0.1~100.0 nm) / (1.0~200...

Embodiment 1

[0043] The background vacuum degree of the sputtering chamber is 6.0×10 -5 Pa, pass 99.99% purity argon into the coating chamber for 0.5 hours before sputtering, and maintain the pressure at 0.6 Pa; during sputtering, the pressure of 99.99% purity high purity argon is 0.2 Pa; the substrate is cooled with circulating deionized water, parallel to A 16 kA / m magnetic field is applied to the plane of the substrate to induce an easy magnetization direction. Prepare a film with Ta as a buffer layer.

[0044] The film is annealed in a vacuum annealing furnace, the annealing temperature is 300℃, the annealing time is 30 m, and it is cooled with the furnace in a magnetic field. The background vacuum of the annealing furnace is 3.0×10 -5 Pa, apply a 55 kA / m magnetic field along the easy axis of the film during annealing.

[0045] figure 1 The magnetization curve of Ta(5 nm) / CoFeB(1 nm) / MgO(2 nm) / Ta(2 nm) thin film as prepared figure 2 The magnetization curve of Ta(5 nm) / CoFeB(1 nm) / MgO(2 n...

Embodiment 2

[0047] The background vacuum degree of the sputtering chamber is 6.0×10 -5 Pa, pass 99.99% purity argon into the coating chamber for 0.5 hours before sputtering, and maintain the pressure at 0.6 Pa; during sputtering, the pressure of 99.99% purity high purity argon is 0.2 Pa; the substrate is cooled with circulating deionized water, parallel to A 16 kA / m magnetic field is applied to the plane of the substrate to induce an easy magnetization direction. The alloy compound of Ta and semimetal element Te is prepared by co-sputtering method. Through chemical analysis, the proportion of Ta in the alloy compound is controlled to be 85%, and the proportion of Te is 15%.

[0048] The film is annealed in a vacuum annealing furnace, the annealing temperature is 400℃, the annealing time is 30 m, and it is cooled with the furnace in a magnetic field. The background vacuum of the annealing furnace is 3.0×10 -5 Pa, apply a 55 kA / m magnetic field along the easy axis of the film during annealing....

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Abstract

The invention relates to a magnetic thin-film material with perpendicular magnetic anisotropy and its preparation method. The thin film structurally includes a substrate, an alloy compound of (0.1-100nm) Ta and semimetallicelements, a multilayer film, and an alloy compound of (0.1-100 nm) Ta and semimetallicelements (such as B, Si, As, Sb, Te and Po). The material and its preparation method havethe advantages that the method includes the step of depositing a buffer layer and a protection layer of the alloy compound of (0.1-100 nm) Ta and semimetallicelements on the two sides of the multilayer film. The special physical and chemical properties of semi-metal materials are made use of for avoiding the diffusion of Ta and meanwhile improving the scattering way of transport electrons in the film, the free path of the electrons is prolonged, the perpendicular magnetic anisotropy of the thin film is thus improved, the thermal stability of the thin-film material is improved, and the performance and product requirements of a magnetic random access memory and a magnetic sensor can thus be met.

Description

Technical field [0001] The invention belongs to the field of magnetic films, and relates to a magnetic film material with perpendicular magnetic anisotropy and a preparation method thereof. Background technique [0002] With the development of non-volatile memory, spin transfer torque-magnetic random access memory (STT-MRAM) has attracted widespread attention due to its characteristics of fast speed, low energy consumption, high storage density and durability. As the size of components decreases, compared with materials with in-plane magnetization, materials with perpendicular magnetic anisotropy (PMA) can still maintain better magnetic properties when the size of the device is reduced to the nanometer level, while still It can effectively reduce the critical current density during magnetization reversal. Among them Co / Pt (Pd, Ir, Au), Fe / Pt (Pd, Ir, Au), Pt / Co / MO, Pt / Fe / MO, CoFeB / MO (MO is metal oxide such as MgO, AlOx, etc.) The multilayer film has a wide range of application...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01F10/00H01F10/30H01F41/14H01F41/22
CPCH01F10/00H01F10/30H01F41/14H01F41/22
Inventor 李明华于广华陈喜施辉方帅
Owner UNIV OF SCI & TECH BEIJING
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