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Multi-grating AlGaN/GaN HETM small signal model and reference extraction method

A small-signal model and gate-finger technology, applied in design optimization/simulation, special data processing applications, instruments, etc., can solve problems that cannot accurately reflect the performance of high-power multi-finger large-size devices

Inactive Publication Date: 2018-03-20
CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a multi-finger AlGaN / GaNHETM small-signal model and its reference method, which is used to solve the problem that the current small-signal model and its reference method cannot accurately reflect High-power multi-finger large-scale device performance issues

Method used

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  • Multi-grating AlGaN/GaN HETM small signal model and reference extraction method
  • Multi-grating AlGaN/GaN HETM small signal model and reference extraction method

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Embodiment 1

[0080] image 3 is the equivalent circuit diagram of the multi-gate AlGaN / GaN HETM small-signal model, as shown in image 3 It can be seen that the multi-gate AlGaN / GaN HETM small-signal model includes a parasitic part and an intrinsic part; the parasitic part includes a gate finger that is suitable for characterizing the intersection of multiple gate fingers and the interaction with the side source and drain electrodes. Capacitors Cpgi, Cpdi and Cgdi.

[0081] Specifically, the intrinsic part includes intrinsic capacitances Cgd, Cgs and Cds, parasitic capacitances Cgdi, Cgsi and Cdsi, gate-source leakage resistance Rgsf1, gate-drain leakage resistance Rgdf2, channel resistance Ri, source-drain resistance Rds and transconductance Gm.

[0082] Wherein, the intrinsic capacitance Cgs is connected in parallel with the gate-source leakage resistance Rgsf and then connected in series with the channel resistance Ri to form a series structure;

[0083] The intrinsic capacitance Cds...

Embodiment 2

[0092] against figure 2 In the device, choose such as image 3 The 19-parameter equivalent circuit model shown is used to simulate the small-signal characteristics of the device, among which, there are 12 parasitic parameters and 7 intrinsic parameters. The seven intrinsic parameters are the intrinsic parameters intrinsic capacitance Cgd, Cgs and Cds, channel resistance Ri, transconductance gm, transconductance delay factor τ and output admittance Gds conductance. The 12 parasitic parameters are divided into 4 groups, with 3 components in each group, from outside to inside: PAD capacitance Cpg, Cpd and Cpgd, lead inductance Lg, Ls and Ld, gate finger capacitance Cpgi, Cpdi and Cgdi, lead resistance Rg, Rs and Rd. In this embodiment, an iterative optimization method is used to extract the parameters of the multi-finger AlGaN / GaN HEMT device model.

[0093] see Figure 4 to Figure 5 , the present invention provides a method for improving the reference of a multi-finger AlGa...

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Abstract

The invention provides a multi-grating AlGaN / GaN HETM small signal model and a reference extraction method. The multi-grating AlGaN / GaN HETM small signal model comprises a parasitic part and an intrinsic part; the parasitic part comprises grating capacitors Cpgi, Cpdi and Cgdi which are applicable for characterizing an additional parasitic capacitance effect generated by the intersection of multiple gratings and the interaction between the gratings and side source-drain electrodes. According to the multi-grating AlGaN / GaN HETM small signal model, for high-power large-current multi-grating large-sized devices, by additionally arranging the grafting capacitors Cpgi, Cpdi and Cgdi to characterize the additional parasitic capacitance effect generated by the intersection of the gratings and theinteraction between the gratings and the side source-drain electrodes, the characteristics of large-sized devices can be more accurately reflected, and the accuracy of the device model is improved.

Description

technical field [0001] The invention belongs to the technical field of integrated circuits, and in particular relates to a multi-finger AlGaN / GaN HETM small-signal model and a reference raising method thereof. Background technique [0002] The small-signal model is the linear equivalent of the large-signal model at a fixed bias point, and is a necessary step to establish a large-signal equivalent circuit model. All small signal model parameters are extracted at fixed bias points. At the same time, the AC parameters of the large signal model also use the parameters extracted by the small signal model at different bias points, so the high-precision small signal model is The basis for building large-signal models. The adoption of accurate device large-signal models simplifies the design steps of radio frequency and microwave millimeter wave power circuits to a certain extent, shortens the circuit development cycle and saves costs. [0003] Based on the outstanding advantages ...

Claims

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Application Information

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IPC IPC(8): G06F17/50
CPCG06F30/20G06F30/367
Inventor 姜元祺
Owner CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO LTD
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