Cleaning device in front of chip potential barrier and cleaning process

Abstract

The invention provides a cleaning device in front of a chip potential barrier and a cleaning process, relates to the field of fabrication of integrated circuits, and specifically relates to a cleaningprocess in front of the chip potential barrier. Provided are a cleaning device in front of the chip potential barrier, which facilitates processing, effectively removes moisture, and improves the product quality, and a cleaning process. The cleaning device comprises a box body, the middle of the box body is provided with a support bench driven by a driver, the support bench is provided with a plurality of frames uniformly arranged in an annular manner, the frames are used for placing a plurality of wafers, the top of the box body is hinged to a box cover, the center of the box cover is provided with a spraying pipe, the spraying pipe, located at the upper portion of the box cover, communicates with a first pipeline and a second pipeline, and the spraying pipe, located at the lower portionof the box cover, is provided with a plurality of nozzles. According to the cleaning device and the cleaning process, the operation is reliable, and the product quality is guaranteed.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a cleaning process before a chip potential barrier. Background technique [0002] After the chip barrier cleaning process, the si inside the die is combined with the metal, but after cleaning, there will be water stains on the surface of the si, and after the barrier corrosion, it is found that the die has abnormal dots ranging in size from <15um. The IR abnormality of the abnormal die causes the chip to be scrapped and cannot be reworked; [0003] Causes of residual water stains: When the barrier is cleaned, the suspended silicon atoms will react with water to form amorphous soluble silica gel, and the residual water droplets will leave silica gel and SIO on the silicon surface after evaporation 2 . [0004] In the HF finishing process in the prior art, the contact angle of water on its surface is between 60 and 80. The larger the contact angle, the stronger ...

AI Technical Summary

Problems solved by technology

[0004] In the HF finishing process in the prior art, the contact angle of water on its surface is between 60 and 80. The larger the contact angle, the stronger the surface tension, which requires sufficient centrifugal force to remove it, and the inertial mass (the size of the water droplet) is small. The required The greater the centrifugal force and the higher the speed, the better the drying effect of the water droplets. However, due to the limitation of the FSI machine itself, the maximum speed is 500RPM / MIN, and the centrifugal force is not enough to completely shake the surface water droplets out of the chip.

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