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Transparent flexible GaN nanorod array light emitting diode device and manufacturing method thereof

A nanorod array and light-emitting diode technology, which is applied in the direction of electric solid-state devices, semiconductor devices, electrical components, etc., can solve the problems of irregular GaN nanorod arrays, failure to meet the requirements of transparency, and low efficiency, and achieve more lighting in the world , Illuminate the world beautifully, improve the effect of luminous efficiency

Inactive Publication Date: 2018-03-09
INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the GaN nanorod arrays grown by Lee et al.
Moreover, its core / shell structure can easily cause side current short circuit, thus resulting in low efficiency of electroluminescence
Moreover, the p-type electrode is still made of Ni / Au metal. Although the LED can be bent, it cannot meet the requirement of transparency when it is not working.

Method used

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  • Transparent flexible GaN nanorod array light emitting diode device and manufacturing method thereof
  • Transparent flexible GaN nanorod array light emitting diode device and manufacturing method thereof
  • Transparent flexible GaN nanorod array light emitting diode device and manufacturing method thereof

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preparation example Construction

[0038] Such as figure 1 As shown, the preparation method of the transparent flexible GaN nanorod array light-emitting diode device comprises the following steps:

[0039] 1. The first transparent flexible electrode of single-layer graphene was prepared on a Cu substrate by chemical vapor deposition (CVD);

[0040] 2. Transfer graphene layer to SiO 2 / Si substrate;

[0041] 3. A regular array of holes is etched by photolithography. The regular array holes are hexagonal, circular, square, triangular or rhombus, and the spacing of the holes is 30 nanometers to 5 microns.

[0042]4. Growth of GaN nanorod array LED structure in regular array holes: n-type GaN nanorod array, InGaN / GaN multilayer quantum well, p-type GaN, forming a composite structure; growing n-type GaN nanorod array, InGaN / GaN The methods of multilayer quantum wells and p-type GaN nanorod arrays are metal organic chemical vapor deposition (MOCVD), hydride vapor deposition (HVPE) or atomic layer deposition (ALD)...

Embodiment

[0047] Such as Figure 1-Figure 4 As shown, the preparation method of the transparent and flexible GaN nanorod array light-emitting diode device in this embodiment, the specific steps are as follows:

[0048] 1) The first transparent flexible electrode 2 of single-layer graphene is grown on the Cu foil by chemical vapor deposition.

[0049] 2) Spin-coat a layer of polymethyl methacrylate (PMMA) on the graphene first transparent flexible electrode 2, and the thickness of PMMA is about 500 nanometers.

[0050] 3) Put the PMMA / graphene first transparent flexible electrode 2 / Cu foil into FeCl as a whole 3 Cu is etched away in aqueous solution (0.6mol / L).

[0051] 4) Clean and dry the silicon dioxide / silicon substrate, and transfer the first transparent flexible electrode 2 of PMMA / graphene to the side of the silicon wafer covered with silicon dioxide as a whole, and the thickness of the silicon dioxide layer is 100nm.

[0052] 5) Utilize acetone to remove PMMA.

[0053] 6) A l...

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Abstract

The invention belongs to the field of light emitting diode devices and particularly relates to a transparent flexible GaN nanorod array light emitting diode device and a manufacturing method thereof.The transparent flexible GaN nanorod array light emitting diode device comprises a transparent flexible substrate, a graphene first transparent flexible electrode, a GaN nanorod array, a graphene second transparent flexible electrode and a transparent flexible material sequentially from bottom to top, wherein the GaN nanorod array comprises n-type GaN, an InGaN / GaN multilayer quantum well and p-type GaN sequentially from bottom to top. Due to the GaN nanorod array in a vertical structure, side leakage similar to a core / shell structure is not caused, and due to a graphic transfer technology forphotolithography, the light emitting nanorod array is regularly arranged and can be arranged to light emitting points of any graph; as the nanorods are vertical and have the uniform lengths, almost all light emitting points emit light, and the light emitting efficiency of the LED can be greatly improved; and the graphene is used as an electrode and a current diffusion layer, the GaN nanorod arrayLED can be bent and can be in a transparent state in a non working state.

Description

technical field [0001] The invention belongs to the field of light-emitting diode devices, and in particular relates to a transparent and flexible GaN nanorod array light-emitting diode device and a preparation method thereof. Background technique [0002] Light-emitting diode (LED), as the fourth-generation light source that attracts the most attention in the world at present, is known as the most promising green lighting source in the 21st century because of its advantages such as high brightness, low heat, long life, and non-toxicity. Gallium nitride is a typical representative of direct wide bandgap (3.4eV) inorganic compound semiconductors and third-generation semiconductor materials, because it has many characteristics superior to organic materials, including high carrier mobility, thermal conductivity, radiation The recombination rate and excellent chemical stability have a good prospect in the application of LEDs. [0003] However, today, whether it is a commercial ...

Claims

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Application Information

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IPC IPC(8): H01L25/075H01L33/00H01L33/04H01L33/42
CPCH01L33/42H01L25/0753H01L33/0075H01L33/04
Inventor 姜辛刘宝丹张兴来刘鲁生
Owner INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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