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Fixing device and fixing method for seed crystal or substrate in single crystal growth of aluminum nitride

A technology of fixing device and fixing method, which is applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve problems such as aluminum nitride single crystal failure, achieve good migration ability, avoid unfavorable factors, and solve the problem of seed crystal fixing Effect

Active Publication Date: 2018-02-13
ULTRATREND TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Both the secondary nucleation phenomenon and the formation of the ceramic layer lead to the failure of the seed-induced growth of AlN single crystals

Method used

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  • Fixing device and fixing method for seed crystal or substrate in single crystal growth of aluminum nitride
  • Fixing device and fixing method for seed crystal or substrate in single crystal growth of aluminum nitride
  • Fixing device and fixing method for seed crystal or substrate in single crystal growth of aluminum nitride

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0059] Put the aluminum nitride powder source 1 into the crucible 2, fix the high-purity tungsten wire mesh at 10 mm above the aluminum nitride powder source 1 through the fixing rod 7, close the crucible cover, and place the crucible 2 in the crystal growth equipment;

[0060] Adjust the air pressure to 100kPa, rapidly raise the temperature to 1800°C and then slowly raise the temperature to 2200°C;

[0061] Adjust the air pressure to 50kPa, and start the adjustment mechanism to adjust the height of the crucible 2 according to the data fed back by the temperature measuring mechanism 5, so that the temperature gradient therein reaches 10°C / cm;

[0062] Keep warm for 80 hours;

[0063] Adjust the air pressure to 100kPa, slowly cool down to room temperature, open the crucible lid and collect aluminum nitride crystals from the high-purity tungsten wire mesh.

Embodiment 2

[0065] Put the aluminum nitride powder source 1 into the crucible 2, place the aluminum nitride seed crystal on the growth platform 6 in the shape of a hollow ring, and fix it at 5 mm above the aluminum nitride powder source 1 by a fixing rod 7, Close the crucible lid, and place the crucible 2 in the crystal growth equipment;

[0066] Adjust the air pressure to 120kPa, quickly raise the temperature to 1800°C and then slowly raise the temperature to 2200°C;

[0067] Adjust the air pressure to 80kPa, and start the adjustment mechanism to adjust the height of the crucible 2 according to the data fed back by the temperature measuring mechanism 5, so that the temperature gradient therein reaches 20°C / cm;

[0068] Keep warm for 100 hours;

[0069] Adjust the air pressure to 120kPa, slowly cool down to room temperature, open the crucible lid and collect aluminum nitride crystals from the aluminum nitride seed crystals.

Embodiment 3

[0071] Put the aluminum nitride powder source 1 into the crucible 2, install the silicon carbide substrate on the growth platform 6 with a buckle structure, fix it at 20 mm above the aluminum nitride powder source 1 through the fixing rod 7, and close the crucible cover, and place the crucible 2 in the crystal growth equipment;

[0072] Adjust the air pressure to 80kPa, quickly raise the temperature to 1800°C and then slowly raise the temperature to 1850°C;

[0073] Adjust the air pressure to 30kPa, and start the adjustment mechanism to adjust the height of the crucible 2 according to the data fed back by the temperature measuring mechanism 5, so that the temperature gradient therein reaches 5°C / cm;

[0074] Keep warm for 60 hours;

[0075] Adjust the air pressure to 80kPa, slowly cool down to room temperature, open the crucible lid and collect aluminum nitride crystals from the silicon carbide substrate.

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Abstract

The invention discloses a fixed device and a fixing method for a seed crystal or a substrate in the single crystal growth of aluminum nitride. A detachable growth platform is arranged between an aluminum nitride powder source and a crucible head cover, so that the seed crystal or substrate material is fixed by means of gravity or in a mechanical mode, crystal growth can be carried out on double surfaces of the seed crystal or substrate simultaneously by setting a first gap and a second gap, the crystal growth efficiency is relatively high, the problem of seed crystal fixation is effectively solved, various adverse factors caused by adhesion of the seed crystal are avoided, and advantages are provided for homoepitaxial growth of aluminum nitride; the seed crystal or substrate gets close toa high temperature area from a low temperature area, a gas phase substance generated through degradation of the aluminum nitride powder source has preferable transfer ability in the high temperature area, and is beneficial for further homoepitaxial / heteroepitaxial growth to further enlarge crystal size; the formation of a white ceramic layer can be avoided completely on the surface of the seed crystal, the single crystal induction effect of the seed crystal is developed, and the aluminum nitride single crystal obtained through the method has extremely high single crystal quality and has relatively high crystal growth rate.

Description

technical field [0001] The invention relates to the technical field of growing aluminum nitride single crystals by a physical vapor transport method, in particular to a seed crystal or substrate fixing device and method for growing aluminum nitride single crystals. Background technique [0002] The third-generation semiconductor material, aluminum nitride (AlN), has a bandgap width of 6.2eV, has unique advantages in the ultraviolet / deep ultraviolet light-emitting band, and is one of the best substrate materials for ultraviolet LEDs. At the same time, because of its high breakdown field strength, high saturated electron drift rate, and good thermal conductivity, electrical conductivity, and radiation resistance, AlN can also meet the design requirements of high-temperature / high-frequency / high-power electronic devices. Printing, biology, medical treatment, communication, detection, environmental protection and other fields have great application potential. [0003] It is hard...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B23/02C30B29/38
CPCC30B23/02C30B29/38
Inventor 吴亮王智昊王琦琨贺广东雷丹
Owner ULTRATREND TECH INC
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