Lateral double-diffused metal oxide semiconductor field effect transistor with adjustable field plates

Abstract

The invention provides a lateral double-diffused metal oxide semiconductor field effect transistor with adjustable field plates. The lateral double-diffused metal oxide semiconductor field effect transistor comprises a field oxide layer and a drift region located at the lower part of the field oxide layer, wherein the surface of the field oxide layer is provided with a plurality of adjustable field plates; two adjacent adjustable field plates are spaced at a set distance; and each adjustable field plate is connected with a regulating capacitor. Inductive charge quantity and inductive potentialon each adjustable field plate can be adjusted through adjusting the sizes of the adjustable field plates and positive and negative electrodes of the regulating capacitor, so that uniform surface transverse electric field distribution is obtained in the drift region. According to the lateral double-diffused metal oxide semiconductor field effect transistor, the surface transverse electric field distribution of the drift region can be improved and the lateral double-diffused metal oxide semiconductor field effect transistor has very high lateral voltage endurance capability and very low on-resistance.

Description

technical field [0001] The invention relates to the field of power semiconductor devices, and more specifically relates to a lateral double-diffused metal-oxide-semiconductor field effect transistor (LDMOS) with an adjustable field plate suitable for high-voltage applications. Background technique [0002] Lateral double diffused metal oxide semiconductor field effect transistor (LDMOS) is a kind of lateral structure of double diffused metal oxide semiconductor field effect transistor device (DMOS). It has the advantages of high withstand voltage, large gain, easy driving, etc., and is more compatible with CMOS technology, so it is widely used in intelligent power integrated circuits. At present, the design focus of the lateral double-diffused metal oxide semiconductor field effect transistor (LDMOS) is how to reasonably alleviate the contradiction between the breakdown voltage and the on-resistance, and ensure its high stability. At present, the focus of research on latera...

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Problems solved by technology

[0004] The object of the present invention is exactly in order to solve above-mentioned problem, has proposed the horizontal double-diffusion metal oxide semiconductor field effect transistor with adjustable type field plate, and the effect size of each field plate in this device can be adjusted through device structure parameter design, improves The problem of uneven lateral electric field distribution in the drift region is solved, and the device has higher lateral withstand voltage capability and smaller on-resistance

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