Diamond particle reinforced molten alloy thermal interface material and preparation method thereof

A technology of diamond particles and thermal interface materials, which is applied in the field of diamond particle-reinforced molten alloy thermal interface materials and its preparation, can solve the problems of high material cost, poor wettability, and large fluidity, and achieve simple equipment, easy operation, The effect of enhancing thermal conductivity

Active Publication Date: 2018-01-12
GUILIN UNIV OF ELECTRONIC TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although compared with most other thermal conductive silicone greases, the thermal conductivity of molten alloys is superior, but its material cost is high, its wettability is poor, and its fluidity is also large, and it is easy to overflow during the bonding process.

Method used

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  • Diamond particle reinforced molten alloy thermal interface material and preparation method thereof

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Comparison scheme
Effect test

Embodiment 1

[0033] Adopt the following steps to realize the present invention:

[0034] (1) Slowly dissolve 4g of metal tungsten particles with a purity of 99.9% in 30% hydrogen peroxide solution, stir continuously, and keep the temperature at 15°C by soaking in a water bath. When the reaction was over, the solution became milky. Immerse the platinum piece in the solution to reduce excess hydrogen peroxide, then add 15ml of ethanol and 4ml of glacial acetic acid, and finally the solution was refluxed at 70°C for 12h until a stable peroxytungstic acid sol-gel was obtained, diluted by adding 10 parts agent to reduce the concentration of the peroxytungstic acid sol-gel;

[0035] (2) Put 40 parts of 100um diamond particles into distilled water and ultrasonically oscillate for 1 hour to remove impurities on the surface, then treat with 50% nitric acid, wash and dry with distilled water, and finally add the treated diamond particles to the Oxytungstic acid sol-gel, stirred for 10min, then fil...

Embodiment 2

[0039] Adopt the following steps to realize the present invention:

[0040] (1) Slowly dissolve 6g of metal tungsten particles with a purity of 99.9% in 30% hydrogen peroxide solution, stir continuously, and keep it at 15°C by soaking in a water bath. When the reaction was over, the solution became milky. Immerse the platinum piece in the solution to reduce excess hydrogen peroxide, then add 15ml of ethanol and 4ml of glacial acetic acid, and finally the solution was refluxed at 60°C for 10h until a stable peroxytungstic acid sol-gel was obtained, diluted by adding 15 parts agent to reduce the concentration of the peroxytungstic acid sol-gel;

[0041] (2) 50 parts of diamond particles with a particle size of 150um were first placed in distilled water for 1 hour to remove impurities on the surface, then treated with 60% nitric acid, washed with distilled water and dried, and finally the treated diamond particles were added to the Oxytungstic acid sol-gel, stirred for 10min, the...

Embodiment 3

[0045] Adopt the following steps to realize the present invention:

[0046] (1) Slowly dissolve 8g of metal tungsten particles with a purity of 99.9% in 30% hydrogen peroxide solution, stir continuously, and keep it at 15°C by soaking in a water bath. When the reaction was over, the solution became milky. Immerse the platinum piece in the solution to reduce excess hydrogen peroxide, then add 15ml of ethanol and 4ml of glacial acetic acid, and finally the solution was refluxed at 50°C for 10h until a stable peroxytungstic acid sol-gel was obtained, diluted by adding 20 parts agent to reduce the concentration of the peroxytungstic acid sol-gel;

[0047] (2) Put 60 parts of diamond particles with a particle size of 200um into distilled water and oscillate for 1 hour to remove impurities on the surface, then treat with 70% nitric acid, wash with distilled water and dry, and finally add the treated diamond particles to the Oxytungstic acid sol-gel, stirred for 10min, then filtere...

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Abstract

The invention discloses a diamond particle reinforced molten alloy thermal interface material and a preparation method thereof. The diamond reinforced molten alloy high-thermal conductivity material comprises the following raw materials in parts by mass: 40 to 100 parts of a molten alloy, 30 to 80 parts of diamond particles, 10 to 20 parts of tungsten metal and 10 to 20 parts of a diluent. The preparation method comprises the steps that diamond particles are subjected to surface treatment sequentially, the surfaces are coated with tungsten layers, the diamond particles are added into a liquidmetal, and the diamond particle reinforced molten alloy thermal interface material is obtained. Through adoption of the technical scheme, on one hand, interface bonding strength of the diamond particle reinforced molten alloy thermal interface material is improved, and on the other hand, the diamond particles are better dispersed in the liquid metal, the heat-conducting property is improved, operation is simple, the thermal conductivity is high, thermal stability is high, and the material can be utilized in the fields of heat dissipation of electric appliances and electronic packaging materials, and the like.

Description

technical field [0001] The invention relates to the technical field of polymer composite materials, in particular to a diamond particle reinforced molten alloy thermal interface material and a preparation method thereof. Background technique [0002] With the increasing performance of electronic products, the rapid development of microelectronics technology, the faster and faster computing speed of chips, and the increasing packaging density, the heat dissipation of electronic components has become one of the technical bottlenecks faced by the development of electronic information industry. IGBT (Insulated Gate Bipolar Transistor) has become a core component in many devices and has important influence in many fields. Now that devices are developing towards high power, IGBT modules have also emerged as the times require, becoming the dominant product in the market. The traditional IGBT module is manufactured by brazing, even if the solder paste or preformed solder film is me...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22C1/10C22C26/00C22C28/00C22C30/04
Inventor 张平姜雄冼耀琪曾建华蔡苗杨道国
Owner GUILIN UNIV OF ELECTRONIC TECH
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