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A two-dimensional transition metal chalcogenide thin film and its preparation method

A transition metal chalcogenide, compound technology, applied in metal material coating process, liquid chemical plating, coating and other directions, to achieve the effect of easy to observe the film, conducive to energy concentration, less energy consumption

Active Publication Date: 2019-08-09
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Aiming at the above defects or improvement needs of the prior art, the present invention provides a two-dimensional transition metal chalcogenide thin film and its preparation method, thereby solving the problem of the prior art that cannot be mass-produced under the premise of ensuring high film quality technical issues

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  • A two-dimensional transition metal chalcogenide thin film and its preparation method
  • A two-dimensional transition metal chalcogenide thin film and its preparation method
  • A two-dimensional transition metal chalcogenide thin film and its preparation method

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preparation example Construction

[0028] Such as figure 1 Shown, a kind of preparation method of two-dimensional transition metal chalcogenide thin film comprises:

[0029] (1) Substrate preparation: Select a silicon wafer with a size of 2 to 4 inches and an oxide layer thickness of 50 to 300 mm, and use a diamond knife to cut a single crystal silicon wafer with an oxide layer as a substrate, with a side length of 0.5 to 1.5 cm square.

[0030] (2) Precursor preparation: Weigh A and B with an electronic balance. The weight of A is 0.001g~0.1g, and the weight of B is 0.001g~0.1g. Airtight reaction for 2-4 hours, the temperature is 20-80 ° C, forming an orange-red precursor solution, A is molybdenum pentachloride or tungsten tetrachloride, B is thiourea or selenourea, C is isopropanol, ethanol or Methanol.

[0031] (3) Cleaning the substrate: use acetone to clean the cut silicon wafer, the square with a side length of 0.5-1.5cm, the purity is greater than 99.5%, ultrasonic for 5-10 minutes, and then use absol...

Embodiment 1

[0035] (1) Substrate preparation: select a silicon wafer with a size of 4 inches and an oxide layer thickness of 150 mm, and use a diamond knife to cut a single crystal silicon wafer with an oxide layer as a substrate, and the substrate is a square with a side length of 0.5 cm.

[0036] (2) Precursor preparation: such as figure 2 Weigh MoCl with electronic balance as shown 5 , with a weight of 0.02g and thiourea, with a weight of 0.1g, were put into a test tube, 5ml of isopropanol was added to the test tube, and the water bath was closed for reaction for 3 hours at a temperature of 60°C to form an orange-red precursor solution.

[0037] (3) Cleaning the substrate: Use acetone to clean the silicon wafer with a side length of 0.5 cm, sonicate for 5 minutes with a purity greater than 99.5%, then use absolute ethanol with a purity greater than 99.7%, sonicate for 5 minutes, and finally use Rinse with deionized water and sonicate for 5 minutes.

[0038] (4) Spin-coating reactant...

Embodiment 2

[0042] (1) Substrate preparation: select a silicon wafer with a size of 2 inches and an oxide layer thickness of 50 mm, use a diamond knife to cut a single crystal silicon wafer with an oxide layer as a substrate, and the substrate is a square with a side length of 1 cm.

[0043] (2) Precursor preparation: Weigh MoCl with an electronic balance 5 The weight is 0.001g, and the weight of thiourea is 0.005g. Put it into a test tube, add 1ml of isopropanol into the test tube, and react in a sealed water bath for 2 hours at a temperature of 80°C to form an orange-red precursor solution.

[0044] (3) Clean the substrate: use acetone to clean the silicon wafer with a side length of 1cm, and use acetone to make the purity greater than 99.5%, sonicate for 10 minutes, then use absolute ethanol to make the purity greater than 99.7%, sonicate for 10 minutes, and finally use Wash with deionized water and sonicate for 10 minutes.

[0045] (4) Spin-coating reactant: place the silicon wafer o...

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Abstract

The invention discloses a two-dimensional transition metal chalcogenide film and a preparation method thereof. The preparation method comprises the steps that A and B are mixed and then added into a C solution, and thus a precursor solution is obtained, wherein A is molybdenum pentachloride or tungsten tetrachloride, B is thiourea or selenourea, and C is isopropanol, or ethyl alcohol or methyl alcohol; the precursor solution is smeared on a silicon wafer with an oxidation layer; and a precursor placed on the surface of the silicon wafer is irradiated by a laser with the output power being 20-200 W for 0.02-2 s under the vacuum environment or the inert atmosphere environment, and thus the two-dimensional transition metal chalcogenide film is obtained. According to the preparation method, the two-dimensional transition metal chalcogenide film is prepared through a laser, the technological process is simple, the two-dimensional transition metal chalcogenide film with the high quality can be obtained in a short time, and the preparation method is suitable for large batch production of the two-dimensional transition metal chalcogenide films.

Description

technical field [0001] The invention belongs to the field of semiconductor thin film preparation, and more specifically relates to a two-dimensional transition metal chalcogenide thin film and a preparation method thereof. Background technique [0002] Two-dimensional transition metal dichalcogenides (TMDs) layered materials have attracted much attention due to their extremely high electron mobility and other excellent optical, electrical, mechanical, chemical, acoustic, and mechanical properties. Compared with traditional silicon materials, single-layer TMDs have a smaller volume and lower dielectric constant. Due to the quantum confinement effect, monolayer TMDs have a direct bandgap, extremely high light absorption and light emission efficiency for red and near-infrared light, and extremely high mobility and current-on-off ratio. Therefore, two-dimensional transition metal chalcogenides are one of the materials of choice for next-generation nano-microelectronic devices (...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C18/14
CPCC23C18/14
Inventor 胡一说曾祥斌王文照吴少雄徐素娥曾洋李寒剑
Owner HUAZHONG UNIV OF SCI & TECH
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