Method for forming semiconductor device

Abstract

A semiconductor device forming method is disclosed and comprises the following steps: a substrate is provided, a high k gate medium layer is formed on the substrate, a cover cap layer is formed on the high k gate medium layer, the cover cap layer contains oxygen ions, and an adsorption layer containing aluminum ions is formed on the cover cap layer; the adsorption layer, the cover cap layer and the high k gate medium layer are subjected to annealing operation; the annealing operation is suitable for enabling the oxygen ions in the cover cap layer to diffuse into the high k gate medium layer, the oxygen ions are adsorbed via the adsorption layer in the annealing operation, the adsorption layer is removed after the annealing operation, and a metal layer is formed on the high k gate medium layer. Via the semiconductor device forming method, performance of the high k gate medium layer can be improved, density of an interface layer can be increased, the substrate can be prevented from excessive oxidation, and electrical properties of a formed semiconductor device can be enhanced.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a semiconductor device. Background technique [0002] The main semiconductor device of an integrated circuit, especially a very large scale integrated circuit, is a metal-oxide-semiconductor field effect transistor (MOS transistor). With the continuous development of integrated circuit manufacturing technology, the technology nodes of semiconductor devices are continuously reduced, and the geometric dimensions of semiconductor structures are continuously reduced following Moore's law. When the size of the semiconductor structure is reduced to a certain extent, various secondary effects caused by the physical limit of the semiconductor structure appear one after another, and it becomes more and more difficult to scale down the feature size of the semiconductor structure. Among them, in the field of semiconductor manufacturing, the most cha...

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Problems solved by technology

[0004] Although the introduction of high-k metal gates can improve the electrical performance of semiconductor devices to a certain extent, the electrical performance of semiconductor devices formed by the prior art still needs to be improved.

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