Formation method of semiconductor structure

Abstract

The invention provides a method for forming a semiconductor structure. The method comprises a step of providing a substrate, a step of forming an interface layer at the surface of the substrate, a step of forming a high k dielectric layer at the surface of the interface layer, and a step of carrying out first annealing process which is used for doping optimization ions in the high k dielectric layer, wherein the optimization ions are used for filling the defects in the high k dielectric layer. The performance of the formed semiconductor structure is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a semiconductor structure. Background technique [0002] With the rapid development of integrated circuit manufacturing technology, the size of semiconductor devices in integrated circuits, especially MOS (Metal Oxide Semiconductor, metal-oxide-semiconductor) devices, is continuously reduced to meet the miniaturization and development of integrated circuits. Integration requirements, and transistor devices are one of the important components of MOS devices. [0003] For semiconductor devices, as the size of semiconductor devices continues to shrink, the gate dielectric layer formed of silicon oxide or silicon oxynitride material in the prior art cannot meet the performance requirements of semiconductor devices. In particular, transistors formed with silicon oxide or silicon oxynitride as the gate dielectric layer are prone to a series of ...

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Problems solved by technology

[0006] However, with the wide application of high-k dielectric materials, the adverse effects of high-k dielectric materials on semiconductor devices are becoming more and more serious

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