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Nitride quantum well infrared photodetector containing polarized regulation layer and preparing method of nitride quantum well infrared photodetector

A technology of infrared detectors and quantum wells, applied in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., to achieve the effects of enhanced response signal strength, dark current suppression, and reduced polarization field strength

Active Publication Date: 2017-11-24
INST OF ELECTRONICS ENG CHINA ACAD OF ENG PHYSICS
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Problems solved by technology

The literature Rong, X. et al.Mid-infrared Photoconductive Response in AlGaN / GaN Step Quantum Wells. Sci.Rep. 5, 14386 (2015) tried to introduce a step-type barrier structure to regulate the polarization electric field, although the pole of the barrier layer The electric field is suppressed, but the photogenerated electrons need to tunnel through the AlGaN insertion layer with a high Al composition, so the photocurrent response signal can only be observed at an ultra-low temperature of 5 K

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  • Nitride quantum well infrared photodetector containing polarized regulation layer and preparing method of nitride quantum well infrared photodetector

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[0029] In order to show the positive effect of the device of the present invention more clearly, figure 1 A schematic diagram of the energy band structure of the functional layer under ideal conditions is given. At the same time, for comparison, the energy band structure without the introduction of the polarization control layer is also given, as shown by the dotted line in the barrier layer. It can be seen that when the polarization control layer is not introduced, the energy band of the barrier layer is in a unidirectional tilt state under the action of the polarization electric field, forming a triangular energy band region, and the excited state energy level is mainly located in this energy band region. This will form a blocking effect on the migration of photogenerated electrons, affecting the effective collection of photocurrent. When a polarization control layer with a slightly higher Al composition than the barrier layer is introduced between the quantum well and the q...

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Abstract

The invention discloses a nitride quantum well infrared photodetector containing a polarized regulation layer and a preparing method of the nitride quantum well infrared photodetector. The nitride quantum well infrared photodetector structurally comprises a lower electrode contact layer, a function layer and an upper electrode contact layer, the function layer is constituted by a periodic heterojunction structure of AlxGa1-xN / AlyGa1-yN / AlzGa1-zN, wherein 0<=x<z<y<=1. According to the nitride quantum well infrared photodetector containing the polarized regulation layer and the preparing method of the nitride quantum well infrared photodetector, the polarized regulation layer is introduced between a quantum potential well layer and a quantum potential barrier layer, a polarized electric field of the potential barrier layer is effectively shielded, the migration efficiency of light induced electrons on the quasi-continuous state energy level can be improved, further the response signal strength of a device is improved, and the problem that currently an AlGaN-based quantum well infrared photodetector at a middle (far) infrared band can only work at an ultralow temperature is expected to be solved.

Description

technical field [0001] The invention belongs to the field of semiconductor photodetectors, and in particular relates to a nitride quantum well infrared detector with a polarization regulating layer and a preparation method thereof. Background technique [0002] Dual-band or even multi-band detection on a single chip is the main direction of future detection technology development. From the perspective of detection bands, ultraviolet and infrared detection technologies are currently two detection technologies with wide application requirements and relatively mature development. If the detection technology of ultraviolet and mid (far) infrared bands is integrated on the same chip, it can not only take advantage of the low background noise of ultraviolet detection technology, but also give full play to the long-distance advantage of infrared detection technology. Application scenarios are especially applicable. Considering the large wavelength span of the ultraviolet and infr...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0304H01L31/0352H01L31/109H01L31/18
CPCH01L31/03048H01L31/035263H01L31/109H01L31/1848H01L31/1852Y02P70/50
Inventor 康健彬李沫李倩王旺平陈飞良张健
Owner INST OF ELECTRONICS ENG CHINA ACAD OF ENG PHYSICS
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