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High-temperature-resistance quantum dot fluorescent material and preparation method thereof

A technology of fluorescent materials and quantum dots, applied in luminescent materials, chemical instruments and methods, nanotechnology for materials and surface science, etc.

Inactive Publication Date: 2017-11-24
厦门世纳芯科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the half-width of Mn-doped quantum dots is relatively wide, generally exceeding 80nm.

Method used

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  • High-temperature-resistance quantum dot fluorescent material and preparation method thereof
  • High-temperature-resistance quantum dot fluorescent material and preparation method thereof
  • High-temperature-resistance quantum dot fluorescent material and preparation method thereof

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preparation example Construction

[0033] A method for preparing a high-temperature-resistant quantum dot fluorescent material, comprising the following preparation steps:

[0034] S100, preparing Se solution;

[0035] S200. Synthesizing quantum dots:

[0036] S210, taking cadmium source, zinc source, fatty acid and organic solvent and placing them in a container;

[0037] S220, heating the mixture in S210 to 80°C-110°C, pumping air for 30min-40min, and then heating to 280°C-310°C;

[0038] S230. Add the Se solution, heat it for a period of time, and raise the temperature to 300°C-310°C;

[0039] S230, adding the Se solution again, keeping the temperature for 20 min to 40 min, and then cooling to room temperature to obtain the CdZnSe@ZnSe quantum dot stock solution;

[0040] S300, purifying the obtained CdZnSe@ZnSe quantum dot stock solution to obtain a high temperature resistant quantum dot fluorescent material.

[0041] Wherein, the Se solution is injected for the first time to form CdZnSe quantum dots, a...

Embodiment 1

[0061] Preparation of quantum dot precursor solution (i.e. Se solution): take 1mmol selenium powder and place it in a centrifuge tube, add 2ml octadecene, shake evenly, and then sonicate for 10min to obtain precursor solution A; repeat the above operation once to obtain precursor solution A Same as Precursor B.

[0062] Synthesis of quantum dots: Take 0.25mmol cadmium oxide and 2.5mmol zinc acetate in a three-necked flask, then add 2ml oleic acid and 5ml octadecene, stir and heat to 100°C, and pump for 30min;

[0063] Further heat up to 280°C, quickly inject precursor solution A; keep warm for 10 minutes to obtain CdZnSe quantum dot core; continue to heat up to 300°C, add precursor solution B drop by drop, then raise the temperature to 310°C for 30 minutes and cool to room temperature to obtain CdZnSe@ZnSe Quantum dot stock solution.

[0064] Purification of quantum dots: Take 2ml of the CdZnSe@ZnSe quantum dot stock solution prepared above, add 2ml of n-hexane, shake evenly;...

Embodiment 2

[0067] Prepare quantum dot precursor solution (i.e. Se solution): take 1mmol selenium powder and place it in a centrifuge tube, add 0.5ml trioctylphosphine and 1.5ml octadecene, oscillate evenly until the selenium powder is completely dissolved to obtain precursor solution A; repeat the above operation Once, get Precursor B which is the same as Precursor A.

[0068] Synthesis of quantum dots: Take 0.25 mmol of cadmium oxide and 2.5 mmol of zinc acetate in a three-necked flask, then add 2 ml of oleic acid and 5 ml of octadecene, stir and heat to 100 ° C, and pump for 30 min;

[0069] Further heat up to 290°C, quickly inject precursor solution A; keep warm for 10 minutes to obtain CdZnSe quantum dot core; continue to heat up to 310°C, add precursor solution B drop by drop, then heat up to 310°C for 30 minutes and cool to room temperature to obtain CdZnSe@ZnSe Quantum dot stock solution.

[0070] Purification of quantum dots: Take 2ml of CdZnSe@ZnSe quantum dot stock solution, a...

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Abstract

The invention provides a high-temperature-resistance quantum dot fluorescent material and a preparation method thereof. The preparation method comprises the following steps: preparing a Se solution; synthesizing quantum dots: putting a cadmium source, a zinc source, fatty acid and an organic solvent into a container to obtain a mixture, heating the mixture obtained in the (S210) to 80-110 DEG C, carrying out air exhausting for 30-40 minutes, heating to 280-310 DEG C, adding the Se solution, maintaining the temperature for a period of time, heating to 300-310 DEG C, adding the Se solution again, maintaining the temperature for 20-40 minutes, and cooling to the room temperature, so as to obtain a CdZnSe@ZnSe quantum dot stock solution; and purifying the obtained CdZnSe@ZnSe quantum dot stock solution, so as to obtain the high-temperature-resistance quantum dot fluorescent material. The high-temperature-resistance quantum dot fluorescent material prepared by virtue of the preparation method has excellent high temperature stability, can still present excellent fluorescence property at 310 DEG C, is narrow in half peak breadth and good in monodispersity and has good application prospects in the field of electro-optical display.

Description

technical field [0001] The invention relates to the field of quantum dot materials, in particular to a high temperature resistant quantum dot fluorescent material and a preparation method thereof. Background technique [0002] Quantum dot materials are widely used in solar cells, biomarkers and optoelectronic displays due to their special size effect and excellent luminescent properties. [0003] Quantum dots are small in size, large in specific surface area, and have extremely high surface energy. Generally, thermal quenching effect will occur at high temperature, that is, the higher the ambient temperature, the lower the luminous efficiency. In addition, photoelectric devices cannot avoid the problem that the conversion efficiency is lower than 100%, so the heat generated will cause the temperature of the device to rise, exceeding 100°C or even higher than 300°C. Quantum dots have excellent optical properties at room temperature, but in Thermal quenching effects occur at ...

Claims

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Application Information

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IPC IPC(8): C09K11/02C09K11/88B82Y20/00B82Y30/00B82Y40/00
CPCC09K11/02B82Y20/00B82Y30/00B82Y40/00C09K11/025C09K11/883
Inventor 李静魏居富周超
Owner 厦门世纳芯科技有限公司
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