Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

LED epitaxial growth method capable of enhancing internal quantum efficiency

A technology of internal quantum efficiency and epitaxial growth, which is applied in the field of LED epitaxial growth to improve internal quantum efficiency, can solve problems affecting LED luminous efficiency, achieve the goal of suppressing electron leakage current, increasing the number of electron-hole pairs, and enhancing luminous radiation efficiency Effect

Inactive Publication Date: 2017-11-17
XIANGNENG HUALEI OPTOELECTRONICS
View PDF4 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0015] In order to solve the technical problem in the background art that the quantum confinement Stark effect affects the luminous efficiency of LEDs, the present invention discloses an LED epitaxial growth method for improving the internal quantum efficiency. By forming an asymmetric well barrier structure, electrons can be inhibited from leaking out of the quantum well. Light-emitting area, thereby inhibiting the generation of electron leakage current, and can effectively promote the injection of holes into the quantum well light-emitting area, increase the number of electron-hole pairs in the quantum well light-emitting area, enhance the luminous radiation efficiency, thereby improving the brightness of the LED

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • LED epitaxial growth method capable of enhancing internal quantum efficiency
  • LED epitaxial growth method capable of enhancing internal quantum efficiency
  • LED epitaxial growth method capable of enhancing internal quantum efficiency

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] This embodiment provides an LED epitaxial growth method for improving internal quantum efficiency, figure 1 A schematic structural diagram of the LED epitaxy prepared by the LED epitaxy growth method in this embodiment is given, please refer to figure 1 , the LED epitaxy, including: a low-temperature GaN buffer layer 102, a non-doped GaN layer 103, an N-type GaN layer 104, a multi-quantum well layer 105, an AlGaN:Mg thin barrier layer 106, a P Type AlGaN layer 107 and P-type GaN layer 108. Wherein, the N-type GaN layer 104 includes a first N-type GaN layer 1041 and a second N-type GaN layer 1042; the multi-quantum well layer 105 includes alternately grown In x Ga (1-x) The alternating period of the N well layer 1051 and the GaN barrier layer 1052 is controlled at 7-15.

[0053] The LED epitaxial growth method for improving the internal quantum efficiency provided by this embodiment, figure 2 The flow chart of the LED epitaxial growth method for improving the intern...

Embodiment 2

[0065] This embodiment provides an LED epitaxial growth method for improving internal quantum efficiency, image 3 A schematic structural diagram of the LED epitaxy prepared by the LED epitaxy growth method in this embodiment is given, please refer to image 3 , the LED epitaxy, including: a low-temperature GaN buffer layer 302, a non-doped GaN layer 303, an N-type GaN layer 304, a multi-quantum well layer 305, an AlGaN:Mg thin barrier layer 306, a P Type AlGaN layer 307 and P-type GaN layer 308. Wherein, the N-type GaN layer 304 includes a first N-type GaN layer 3041 and a second N-type GaN layer 3042; the multi-quantum well layer 305 includes alternately grown In x Ga (1-x) The alternating period of the N well layer 3051 and the GaN barrier layer 3052 is controlled at 7-15.

[0066] The LED epitaxial growth method for improving the internal quantum efficiency provided by this embodiment, Figure 4 The flow chart of the LED epitaxial growth method for improving the intern...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present application provides an LED epitaxial growth method for improving internal quantum efficiency, including: at a temperature of 750-900°C and a reaction chamber pressure of 800-950mbar, feeding 50000-55000sccm of NH3, 50-70sccm of TMGa, 90- Under the conditions of 110L / min of H2, 1200-1400sccm of TMAl, and 800sccm-1050sccm of CP2Mg, a layer of AlGaN:Mg thin barrier layer is grown by introducing AlGaN:Mg thin barrier layer on the side of the multi-quantum well layer close to the P-type layer layer, which forms an asymmetric well barrier structure, which is used to suppress the leakage of electrons out of the quantum well light-emitting region, suppress the generation of electron leakage current, and effectively promote the injection of holes into the multi-quantum well layer, increasing the electron-hole pairs of the multi-quantum well layer Quantity, enhance the luminous radiation efficiency, thereby improving the brightness of the LED.

Description

technical field [0001] The invention belongs to the technical field of LEDs, and in particular relates to an LED epitaxial growth method for improving internal quantum efficiency. Background technique [0002] A light-emitting diode (Light-Emitting Diode, LED) is a semiconductor electronic device that converts electrical energy into light energy. When electric current flows, electrons and holes recombine in it to emit monochromatic light. As a high-efficiency, environmentally friendly, and green new solid-state lighting source, LED has the advantages of low voltage, low power consumption, small size, light weight, long life, high reliability, and rich colors. At present, the scale of domestic production of LEDs is gradually expanding, but LEDs still have the problem of low efficiency. [0003] The traditional LED structure epitaxial growth method includes the following steps: [0004] 1. At a temperature of 1000-1100°C and a reaction chamber pressure of 100-300mbar, feed ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/06H01L33/20
CPCH01L33/0075H01L33/06H01L33/20
Inventor 徐平
Owner XIANGNENG HUALEI OPTOELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com