Deep hole etching method of SiC-based GaN crystal
A crystal and deep hole technology, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as effective control of device warpage, etching rate, and hole uniformity that are difficult to meet process requirements. , to achieve good handling, less staining, and weak metal erosion
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[0030] In order to make the purpose, technical solutions and advantages of the present application clearer, the present application will be described in further detail below in conjunction with the accompanying drawings and specific embodiments. For the sake of simplicity, some technical features known to those skilled in the art are omitted from the following description.
[0031] See Figure 1 to Figure 6 , a deep hole etching method for SiC-based GaN crystals, SiC-based GaN crystals (see figure 1 ) from bottom to top are the SiC substrate layer, GaN layer, and source metal layer. The deep hole etching is to perform dry etching on the SiC substrate layer and the GaN layer to form the back hole of the SiC-based GaN crystal. The complete etching steps (see Figure 5 )as follows:
[0032] S1: Pre-etching treatment, mechanically grind the SiC substrate layer to thin it to 90um-110μm, and then photolithography and deposit Ti on the back of the SiC substrate layer, thereby formi...
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