A kind of preparation method of low-voltage high-energy sic semiconductor nozzle material

Abstract

The invention discloses a preparation method of a low-pressure and high-energy SiC semiconductor spark plug material. The method comprises the steps as follows: 1) 45%-70% of SiC powder, 5%-15% of ZrO2 powder, 10%-30% of Al2O3 powder and 10%-30% of composite oxide powder constituting a glass system are selected in the volume ratio, are uniformly mixed and pass a 200-mesh sieve to be stored for later use; 2) PVA with the solid content being 8% is added in the weight ratio of powder to PVA being 95:5 and manually and uniformly mixed, and the mixture passes a 80-mesh sieve and is pressed under the pressure of 80 MPa to form a green body; 3) the green body is placed in an air furnace to be sintered, heated to 450 DEG C at the heating rate of 5 DEG C / h and kept at the constant temperature for 12 h; 4) the green body with glue removed is placed in a vacuum sintering furnace, filled with Ar, heated to 1,600-1,800 DEG C at the heating rate of 5 DEG C / min to be sintered and kept at the constant temperature for 1-3 h. The prepared SiC semiconductor composite has excellent performance of low ignition voltage, high spark capacity, capability of avoiding effects of air pressure and environmental media, heat shock resistance, electric spark corrosion resistance, good extinguishment restart and high-attitude performance and the like.

Description

technical field [0001] The invention relates to a low-voltage high-energy semiconductor electric nozzle material, in particular to a preparation method of a low-voltage high-energy SiC semiconductor electric nozzle material. Background technique [0002] The working principle of the aviation semiconductor nozzle is to form a spark discharge on the surface of the semiconductor under a certain voltage condition, thereby igniting the engine fuel mixture; because the semiconductor nozzle is directly exposed to high-temperature fuel gas, it is subjected to very harsh working conditions, especially when it is turned off at high altitude , which needs to be carried out under harsh conditions such as low temperature, low pressure and high-speed airflow injection, and requires a low-pressure high-energy ignition system with stable and reliable ignition performance and large spark energy. Semiconducting ceramic material is the core component of the ignition tip, its physical and elect...

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Problems solved by technology

[0005] The purpose of the present invention is to solve the problem of carbon deposition failure existing in the existing SiC semiconductor electric nozzle, poor high temperature resistance (less than 1400 ° C), and thermal shock resistance leading to cracking defects, etc., to propose a low ignition voltage, spark High energy, not affected by air pressure and environmental media, thermal shock resistance, spark corrosion resistance, restart after extinguishing, and a preparation method of SiC semiconductor electric nozzle material with good high-altitude performance

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