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Preparation method of honeycomb-shaped zinc oxide nanowall array

A zinc oxide nano- and honeycomb-shaped technology, applied in the field of photocatalysis, can solve problems such as limiting the practical application of zinc oxide nano-array structures, high cost, and complicated operation, and achieve good photocatalytic performance, low cost, and good stability.

Inactive Publication Date: 2017-11-07
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the methods for manufacturing nanoarray structures include electrochemical deposition, template method, and etching method, which are expensive, complicated to operate, and low in yield, which limits the practical application of zinc oxide nanoarray structures.

Method used

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  • Preparation method of honeycomb-shaped zinc oxide nanowall array
  • Preparation method of honeycomb-shaped zinc oxide nanowall array
  • Preparation method of honeycomb-shaped zinc oxide nanowall array

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] (1) Cut the aluminum foil into a suitable shape, and then use acetone, alcohol, and deionized water for ultrasonic cleaning;

[0023] (2) Use oxygen with a flow rate of 5SCCM and argon with a flow rate of 40SCCM as the reaction gas, at a pressure of 5*10 -1 Pa, under the condition of 40W power, prepare zinc oxide seed layer on aluminum foil substrate, and the coating time is 10min;

[0024] (3) Put the seed layer-plated substrate obtained in step (2) in a mixed solution of zinc nitrate and hexamethylenetetramine (molar ratio 1:1) for hydrothermal reaction at a temperature of 95°C and water The thermal growth time is 3h, and the honeycomb zinc oxide nanowall array is obtained;

[0025] (4) Perform DC sputtering silver plating on the resultant of step (3), under the condition that the flow rate is 40SCCM argon gas, the power is 40W, and the sputtering is 45s, so that a layer of Ag nanoparticles is deposited on the surface of the resultant;

[0026] (5) Subjecting the resultant in...

Embodiment 2

[0030] (1) Cut the aluminum foil into a suitable shape, and then use acetone, alcohol, and deionized water for ultrasonic cleaning;

[0031] (2) Using oxygen with a flow rate of 10 SCCM and argon with a flow rate of 50 SCCM as the reaction gas, under the conditions of a pressure of 1.0 Pa and a power of 70 W, a zinc oxide seed layer was prepared on the aluminum foil substrate, and the coating time was 10 minutes;

[0032] (3) Put the seed layer-plated substrate obtained in step (2) in a mixed solution of zinc nitrate and hexamethylenetetramine (molar ratio 1:1) for hydrothermal reaction at a temperature of 95°C and water The thermal growth time is 4h, and the honeycomb-shaped zinc oxide nanowall array is obtained;

[0033] (4) Perform DC sputtering silver plating on the resultant of step (3), under the condition that the flow rate is 10SCCM argon gas, the power is 20W, and the sputtering is 45s to deposit a layer of Ag nanoparticles on the surface;

[0034] (5) Subjecting the resultan...

Embodiment 3

[0038] (1) Cut the aluminum foil into a suitable shape, and then use acetone, alcohol, and deionized water for ultrasonic cleaning;

[0039] (2) Using oxygen with a flow rate of 10 SCCM and argon with a flow rate of 50 SCCM as the reaction gas, under the conditions of a pressure of 1.0 Pa and a power of 70 W, a zinc oxide seed layer was prepared on the aluminum foil substrate, and the coating time was 10 minutes;

[0040] (3) Put the substrate coated with the seed layer in (2) in a mixed solution of zinc nitrate and hexamethylenetetramine (molar ratio 1:1), the temperature of the hydrothermal method is 95℃, and the time of hydrothermal growth is 4h to obtain a honeycomb-shaped zinc oxide nanowall array;

[0041] (4) The conditions for the sample in (3) to be silver-plated by DC sputtering are as follows: flow 10SCCM argon gas, power 20W, sputtering 30s, and deposit a layer of Ag nanoparticles on the surface;

[0042] (5) Annealing treatment at an annealing temperature of 200°C and a h...

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Abstract

The invention discloses a preparation method of a honeycomb-shaped zinc oxide nanowall array. The preparation method comprises steps as follows: (1), an aluminum foil substrate is cleaned; (2), a seed layer is subjected to sputtering with a radio frequency magnetron method; (3), a product obtained in the step (2) is subjected to a hydrothermal reaction, and the honeycomb-shaped zinc oxide nanowall array is obtained; (4), a product obtained in the step (3) is subjected to direct current sputtering for silver plating; (5), a product obtained in the step (4) is subjected to annealing treatment. After 90 min, 93% of a methyl orange solution can be degraded by a photocatalytic material at the room temperature, and the degradation rate is in accordance with a first-order constant and reaches 0.02952 min<-1>. The prepared zinc oxide photocatalytic material does not require a template, is low in cost, good in recoverability, excellent in photocatalytic performance and good in stability and facilitates large-scale production, thereby being capable of applying to photocatalytic degradation for dye organic pollutants.

Description

Technical field [0001] The invention belongs to the technical field of photocatalysis, and specifically relates to a preparation method of a honeycomb mesoporous nanowall array structure photocatalytic material, in particular to a preparation method of a honeycomb zinc oxide nanowall array. Background technique [0002] Semiconductor materials are widely used in the field of photocatalysis, gas sensors, solar cells and memory devices. One of the most widely used materials is zinc oxide. Zinc oxide is a typical n-type semiconductor material, which has the characteristics of low cost, easy preparation, high carrier mobility and good light sensitivity, so it has become a widely used photocatalytic material. However, the direct band gap of zinc oxide is 3.37 eV, and it has a large exciton binding energy (60 meV), which limits its utilization efficiency of visible light. At the same time, the recombination rate of photoinduced electron-hole pairs in zinc oxide is large, and it has a ...

Claims

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Application Information

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IPC IPC(8): B01J23/50B01J35/04C02F1/30B82Y40/00B82Y30/00C02F101/38C02F101/34
CPCB82Y30/00B82Y40/00C02F1/30B01J23/50C02F2101/308C02F2101/40C02F2101/34C02F2101/38C02F2305/10B01J35/56B01J35/39B01J35/647
Inventor 李正操冯一盟廖杰翠李明阳
Owner TSINGHUA UNIV
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