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Silicon carbide power diode device and manufacturing method thereof

A power diode, silicon carbide technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the limitations of the popularization and application of silicon carbide PIN diode devices, large forward voltage drop, poor reverse recovery characteristics, etc. question

Active Publication Date: 2017-10-17
HANGZHOU SILICON-MAGIC SEMICON TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, silicon carbide PIN diodes in the prior art still have a large forward voltage drop (the silicon carbide PN junction voltage drop is about 3V) and poor reverse recovery characteristics (the conductance modulation in the drift region injects a large amount of excess carriers during forward conduction ) and other deficiencies, which severely limit the further popularization and application of silicon carbide PIN diode devices

Method used

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  • Silicon carbide power diode device and manufacturing method thereof
  • Silicon carbide power diode device and manufacturing method thereof
  • Silicon carbide power diode device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0075] A silicon carbide power diode device, the cell structure of its basic structure is as follows figure 2 Shown: specifically include: metal cathode 5, silicon carbide N + Substrate 4 and SiC N - The epitaxial layer 3 is characterized in that: the silicon carbide N - The epitaxial layer 3 has P inside + SiC region 6, in the P + The upper surface of silicon carbide region 6 also has P + polysilicon layer 7, the P + The polysilicon layer 7 is located on the silicon carbide N - The interior of the epitaxial layer 3 and above it, located in silicon carbide N - P inside the epitaxial layer 3 + polysilicon layer 7 with N - The epitaxial layer 3 is in contact so that P-type Si and N-type SiC form a heterojunction; - P above the epitaxial layer 3 + Both sides of the polysilicon layer 7 also have a P + The polysilicon layer 7 is coplanar and the first P + SiC region 21 and the second P + SiC region 22, the P + Polysilicon layer 7 in SiC N - The depth inside the epit...

Embodiment 2

[0078] except P + The width of SiC region 6 is greater than P + The width of the silicon carbide region 6, the difference between the two widths is in the range of 0.1-0.5 μm, and P + The width of SiC region 6 is greater than P + Except for the thickness of the silicon carbide region 6, the rest of the structure of this embodiment is the same as that of Embodiment 1, such as image 3 shown.

[0079] Compared with Example 1, this embodiment further improves P + The electric field shielding function of the silicon carbide region 6 further improves the breakdown voltage of the device and reduces the reverse leakage current.

Embodiment 3

[0081] except in P + There is also a P-type silicon carbide region 9 in contact with it under the silicon carbide region 6 and silicon carbide N on both sides. - Except that the superjunction or semi-superjunction structure is formed by the epitaxial layer 3 , the rest of the structure of this embodiment is the same as that of Embodiment 1.

[0082] Compared with Example 1, this embodiment further improves the silicon carbide N - The doping concentration of the epitaxial layer 3 reduces the forward conduction voltage drop of the device, increases the breakdown voltage of the device and improves the reverse recovery characteristic of the device.

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Abstract

The invention discloses a silicon carbide power diode device and a manufacturing method thereof, belonging to the technical field of power semiconductors. A trench structure is formed in the surface drift region of a conventional silicon carbide device, a high concentration doped region opposite to the drift region in the doping type is formed at the bottom of the trench, and a polysilicon layer opposite to the drift region in the doping type is arranged in the trench, so that the polysilicon layer and the trench side wall form an Si / SiC heterojunction, and furthermore, a diode is integrated inside the device. According to the invention, the forward voltage drop of the device is reduced, meanwhile, as the conduction mode of the device is converted from the silicon carbide PIN diode bipolar conduction into majority carrier conduction, thereby improving the reverse recovery characteristic of the device and improving the device switching speed; and the device further has the advantages of low PIN diode reverse leakage, high breakdown voltage and good device temperature stability. In addition, the device manufacturing method has the advantages of simple process, fewer process step, and low cost.

Description

technical field [0001] The invention belongs to the technical field of power semiconductors, and in particular relates to a silicon carbide power diode device and a manufacturing method thereof. Background technique [0002] Power devices and their modules provide an effective way to realize the conversion of various forms of electric energy, and have been widely used in national defense construction, transportation, industrial production, medical and health and other fields. Since the first power device application in the 1950s, each generation of power devices has enabled more efficient conversion and use of energy. [0003] Traditional power devices and modules are dominated by silicon-based power devices, mainly thyristors, power PIN devices, power bipolar junction devices, power MOSFETs, and insulated gate field-effect transistors, which have been widely used in the full power range. Application, with its long history, very mature design technology and process technolo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/36H01L21/329H01L29/868
CPCH01L29/0688H01L29/36H01L29/6609H01L29/868
Inventor 张金平邹华刘竞秀李泽宏任敏张波
Owner HANGZHOU SILICON-MAGIC SEMICON TECH CO LTD
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