Nitrogen-doped porous vertical graphene nanowall array and its preparation method and application

A graphene nanowall and nitrogen doping technology, applied in the field of nanomaterials, can solve the problems of difficult to obtain VAGN, high technical requirements and high cost of PECVD, achieve easy control of reaction conditions and processes, no damage to the structure, prevent The effect of stacking between layers

Active Publication Date: 2019-03-08
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the technical requirements for PECVD growth are relatively high
Freestanding VAGNs with certain morphologies are not easily obtained due to the support (e.g. planar substrate or foam-like framework) necessary for PECVD growth of VAGWs.
and the cost is too high

Method used

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  • Nitrogen-doped porous vertical graphene nanowall array and its preparation method and application
  • Nitrogen-doped porous vertical graphene nanowall array and its preparation method and application
  • Nitrogen-doped porous vertical graphene nanowall array and its preparation method and application

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Effect test

Embodiment 1

[0035] A method for preparing a nitrogen-doped porous vertical graphene nanowall array includes the following steps:

[0036] (1) Activate the carbon cloth and prepare the nickel hydroxide precursor growth solution, cut the carbon cloth into a size of 1cm*2cm, arrange the carbon in a 1:1 ethanol and 30% hydrogen peroxide solution oven and heat it to 60 Keep at ℃ for 24 hours to obtain activated carbon cloth. The nickel hydroxide precursor growth solution formula is a mixed solution of 0.15M / L nickel chloride hexahydrate and 0.3M / L hexamethylenetetramine.

[0037] (2) The activated carbon is placed in the nickel hydroxide precursor growth solution, and heated to 100° C. in an oven for 10 hours to grow nickel hydroxide to obtain nickel hydroxide / carbon cloth, and the nickel hydroxide grows on the carbon cloth. The scanning electron microscope (SEM) image of nickel hydroxide / carbon cloth is as follows figure 1 Shown.

[0038] (3) Place the obtained nickel hydroxide / carbon in a mixed s...

Embodiment 2

[0043] A method for preparing a nitrogen-doped porous vertical graphene nanowall array includes the following steps:

[0044] (1) Activate the carbon cloth and prepare the nickel hydroxide precursor growth solution, cut the carbon cloth into a size of 1cm*2cm, arrange the carbon in a 1:1 ethanol and 30% hydrogen peroxide solution oven and heat it to 60 Keep at ℃ for 24 hours to obtain activated carbon cloth. The nickel hydroxide precursor growth solution formula is a mixed solution of 0.15M / L nickel chloride hexahydrate and 0.3M / L hexamethylenetetramine.

[0045] (2) The activated carbon is placed in the nickel hydroxide precursor growth solution, and heated to 100° C. in an oven for 10 hours to grow nickel hydroxide to obtain a nickel hydroxide / carbon cloth composite.

[0046] (3) Place the obtained nickel hydroxide / carbon in a mixed solution of dopamine hydrochloride-Tris, the concentration of Tris is 1.21g / L, the concentration range of dopamine hydrochloride is 2g / L, and the reac...

Embodiment 3

[0051] A method for preparing a nitrogen-doped porous vertical graphene nanowall array includes the following steps:

[0052] (1) Activate the carbon cloth and prepare the nickel hydroxide precursor growth solution, cut the carbon cloth into a size of 1cm*2cm, arrange the carbon in a 1:1 ethanol and 30% hydrogen peroxide solution oven and heat it to 60 Keep at ℃ for 24 hours to obtain activated carbon cloth. The nickel hydroxide precursor growth solution formula is a mixed solution of 0.15M / L nickel chloride hexahydrate and 0.3M / L hexamethylenetetramine.

[0053] (2) The activated carbon is placed in the nickel hydroxide precursor growth solution, and heated to 100° C. in an oven for 10 hours to grow nickel hydroxide to obtain a nickel hydroxide / carbon cloth composite.

[0054] (3) Place the obtained nickel hydroxide / carbon in a mixed solution of dopamine hydrochloride-Tris, the concentration of Tris is 1.21g / L, the concentration range of dopamine hydrochloride is 2g / L, and the reac...

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Abstract

The invention provides a nitrogen-doped porous vertical graphene nanowall array. A compact coating layer is formed by means of nickel hydroxide serving as a template and the self-assembly property of dopamine, then high-temperature carbonization is conducted to prepare a nitrogen-doped vertical graphene nanowall array material, in-situ functional modification is conducted on the basis, the compound functional material loaded with noble metal nanoparticles, noble metal alloy nanoparticles, metal oxides, metal sulfide, metal phosphide, conductive polymers and the like is obtained, and application in the fields of supercapacitors, lithium ion batteries, water decomposition, electrochemical catalysis, enzyme-free biosensors and the like is explored.

Description

Technical field [0001] The invention belongs to the technical field of nanomaterials, and more specifically, relates to a preparation method of a nitrogen-doped vertical graphene nanowall array and the preparation and application exploration of an in-situ functionalized material. Background technique [0002] Graphene can be regarded as a sheet of graphite, which is a two-dimensional nano-carbon material obtained by connecting sp2 hybridized carbon atoms in hexagons, and has a conjugated structure. Its thickness is only 0.335nm, which is the basic unit for constructing other dimensional carbonaceous materials (such as zero-dimensional fullerenes, one-dimensional carbon nanotubes, and three-dimensional graphite). Graphene is currently the thinnest material discovered, and its discoverer won the Nobel Prize in Physics in 2010. Due to the unique two-dimensional structure of graphene, it has unique properties such as excellent conductivity, carrier migration rate, mechanical propert...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B82B1/00B82B3/00B82Y30/00B82Y40/00H01G11/36H01G11/86
CPCY02E60/13
Inventor 王帅池凯肖菲袁号张哲野
Owner HUAZHONG UNIV OF SCI & TECH
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