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A preparation method of high-purity, highly sintering active indium tin oxide mixed powder

A technology of indium tin oxide and mixed powder, which is applied in the preparation of indium tin oxide mixed powder, high-end ITO target material, and high sintering activity field, which can solve the problem of many agglomerations, low sintering activity, and unsatisfactory dispersion of ITO powder and other problems to achieve the effect of preventing coagulation and reducing serious agglomeration

Active Publication Date: 2020-08-28
ANHUI TUOJITAI NOVEL CERAMIC TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The invention provides a method of using a composite dispersant to assist in the synthesis of a precursor for hydrothermal treatment, which solves the problems of unsatisfactory dispersibility, frequent agglomeration, and low sintering activity of the ITO powder prepared by the existing preparation method

Method used

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  • A preparation method of high-purity, highly sintering active indium tin oxide mixed powder
  • A preparation method of high-purity, highly sintering active indium tin oxide mixed powder
  • A preparation method of high-purity, highly sintering active indium tin oxide mixed powder

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Embodiment 1

[0032] This embodiment provides a method for preparing a high-purity, highly sinterable indium tin oxide mixed powder, which includes the following steps:

[0033] (1) Prepare the composite dispersant solution, after the dispersants are completely dissolved in water, then mix together;

[0034] (2) Take SnCl 4 ·5H 2 O crystals were added to deionized water, stirred and dissolved, and the composite dispersant solution was added to obtain SnCl 4 solution;

[0035] (3) Keep stirring continuously, add ammonia water to SnCl 4 In the solution, a white precipitated precursor is generated;

[0036] (4) Move the precursor into a titanium alloy-lined autoclave for hydrothermal reaction;

[0037] (5) After the hydrothermal reaction is over, take it out from the reaction kettle after natural cooling, and wash it repeatedly with deionized water until there is no Cl - In the presence of ions, after drying, heat treatment at 600°C for 3 hours, SnO can be obtained 2 Nano powder ( figu...

Embodiment 2

[0051] This embodiment provides a method for preparing a high-purity, highly sinterable indium tin oxide mixed powder, which includes the following steps:

[0052] (1) Prepare the composite dispersant solution, after the dispersants are completely dissolved in water, then mix together;

[0053] (2) Take SnCl 4 ·5H 2 O crystals were added to deionized water, stirred and dissolved, and the composite dispersant solution was added to obtain SnCl 4 solution;

[0054] (3) Keep stirring continuously, slowly drip ammonia water into SnCl 4 In the solution, a white precipitated precursor is generated;

[0055] (4) Move the precursor into a titanium alloy-lined autoclave for hydrothermal reaction;

[0056] (5) After the hydrothermal reaction is over, take it out from the reaction kettle after natural cooling, and wash it repeatedly with deionized water until there is no Cl - Drying without ions, after heat treatment at 600°C for 3 hours, SnO 2 Nano powder;

[0057] (6) Dissolve m...

Embodiment 3

[0070] This embodiment provides a method for preparing a high-purity, highly sinterable indium tin oxide mixed powder, which includes the following steps:

[0071] (1) Prepare the composite dispersant solution, after the dispersants are completely dissolved in water, then mix together;

[0072] (2) Take SnCl 4 ·5H 2 O crystals were added to deionized water, stirred and dissolved, and the composite dispersant solution was added to obtain SnCl 4 solution;

[0073] (3) Keep stirring continuously, add ammonia water to SnCl 4 In the solution, a white precipitated precursor is generated;

[0074] (4) Move the precursor into a titanium alloy-lined autoclave for hydrothermal reaction;

[0075] (5) After the hydrothermal reaction is over, take it out from the reaction kettle after natural cooling, and wash repeatedly with deionized water until Cl - Ions do not exist, after drying, 600 ° C, 3h heat treatment, get SnO 2 Nano powder;

[0076] (6) Dissolve metal In into concentrate...

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Abstract

The invention discloses a high-sintering active indium tin oxide mixed powder preparation method. The method particularly comprises the steps that high-activity nano SnO2 powder is prepared, wherein a compound dispersing agent is dissolved into water, an appropriate amount of SnCl4 is added, stirring is conducted till the mixture is completely transparent, and clarification is conducted; stirring is kept, an appropriate amount of ammonium hydroxide is added, a tin-containing precursor is obtained, after the precursor is placed in a high pressure reaction kettle to be subjected to hydrothermal treatment, sediment is taken out to be washed repeatedly, dried and subjected to low temperature thermal treatment, and nano SnO2 powder is obtained; metal indium is dissolved into hydrochloric acid, a InCl3 aqueous solution is generated, and a method similar to the method for synthesizing SnO2 powder is used for preparing nano In2O3 powder; the prepared InCl3 is mixed with SnO2 in proportion, PVA is added, by means of a spray drying technology, mixed indium tin oxide granulation powder which is less in aggregation, good in liquidity and prone to pressure molding is obtained, and the preparation method can be suitable for preparing high-end ITO target materials.

Description

technical field [0001] The invention relates to the technical field of indium tin oxide target material preparation, in particular to a method for preparing indium tin oxide mixed powder. The mixed oxide powder with high sintering activity and high purity obtained by this method is suitable for preparing high-end ITO target. Background technique [0002] The ITO film can be prepared by the magnetron sputtering method from the ITO target material. In industrial production, the magnetron sputtering method is mostly used to sputter the ITO target material on the glass into a very thin layer of transparent conductive film (thickness is about 100nm). ), etch the film to prepare electrode materials for flat panel displays. To obtain high-quality ITO thin films, the key is to obtain high-density, high-purity and high-uniformity ITO targets. Like general ceramic products, the ITO target material is also completed by preparing high-purity, uniform particle size ITO powder, and then...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/01C04B35/457C04B35/626B82Y30/00C23C14/35
CPCB82Y30/00C04B35/01C04B35/457C04B35/626C23C14/3414C23C14/35
Inventor 张天舒宋晓超蒋卫国何东
Owner ANHUI TUOJITAI NOVEL CERAMIC TECH
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