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Preparation method of molybdenum disulfide/copper sulfide/cuprous oxide nano-composite material

A nano-composite material, cuprous oxide technology, applied in the direction of copper oxide/copper hydroxide, molybdenum sulfide, chemical instruments and methods, to achieve the effect of promoting separation, high sample uniformity, and simple process

Inactive Publication Date: 2017-08-25
CHINA JILIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are very few studies on the preparation of molybdenum disulfide / copper sulfide / cuprous oxide nanocomposites in the past, and it is of great significance to explore the preparation of such nanocomposites

Method used

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  • Preparation method of molybdenum disulfide/copper sulfide/cuprous oxide nano-composite material
  • Preparation method of molybdenum disulfide/copper sulfide/cuprous oxide nano-composite material
  • Preparation method of molybdenum disulfide/copper sulfide/cuprous oxide nano-composite material

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Experimental program
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Effect test

Embodiment 1

[0034] Add 0.175g copper oxide to deionized water, stir magnetically to obtain the mixture, then add 0.6g sodium molybdate dihydrate, continue magnetic stirring, then add 2.4g thiourea, continue magnetic stirring, then add 0.13gCTAB, continue magnetic stirring, Then the mixture was transferred to the polytetrafluoroethylene lining of the stainless steel autoclave, kept at a temperature of 220°C for 24 hours, and naturally cooled to room temperature to generate the product, which was washed five times with deionized water and ethanol respectively, The product was then vacuum-dried at 60° C. for 12 hours to obtain a dried molybdenum disulfide / copper sulfide / cuprous oxide nanocomposite material. figure 1 The XRD pattern in shows that the synthesized composite includes three phases of molybdenum disulfide, copper sulfide and cuprous oxide. figure 2 The scanning electron microscope picture shown shows that its microscopic morphology is a core-shell structure.

Embodiment 2

[0036] Add 0.35g copper oxide to deionized water, stir magnetically to obtain the mixture, then add 0.6g sodium molybdate dihydrate, continue magnetic stirring, then add 2.4g thiourea, continue magnetic stirring, then add 0.13gCTAB, continue magnetic stirring, Then the mixture was transferred to the polytetrafluoroethylene lining of the stainless steel autoclave, kept at a temperature of 220°C for 24 hours, and naturally cooled to room temperature to generate the product, which was washed five times with deionized water and ethanol respectively, The product was then vacuum-dried at 60° C. for 12 hours to obtain a dried molybdenum disulfide / copper sulfide / cuprous oxide nanocomposite material. figure 1 The XRD pattern in shows that the synthesized composite includes three phases of molybdenum disulfide, copper sulfide and cuprous oxide. image 3 The SEM pictures shown show the microscopic morphology of the composites.

Embodiment 3

[0038] Add 0.7g copper oxide to deionized water, stir magnetically to obtain the mixture, then add 0.6g sodium molybdate dihydrate, continue magnetic stirring, then add 2.4g thiourea, continue magnetic stirring, then add 0.13g CTAB, continue magnetic stirring, Then the mixture was transferred to the polytetrafluoroethylene lining of the stainless steel autoclave, kept at a temperature of 220°C for 24 hours, and naturally cooled to room temperature to generate the product, which was washed five times with deionized water and ethanol respectively, The product was then vacuum-dried at 60° C. for 12 hours to obtain a dried molybdenum disulfide / copper sulfide / cuprous oxide nanocomposite material. figure 1 The XRD pattern in shows that the synthesized composite includes three phases of molybdenum disulfide, copper sulfide and cuprous oxide. Figure 4 The SEM pictures shown show the microscopic morphology of the composites.

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Abstract

The invention discloses a preparation method of a molybdenum disulfide / copper sulfide / cuprous oxide nano-composite material. The preparation method comprises the steps of adding copper oxide into deionized water, stirring to form a mixture, adding sodium molybdate dihydrate, thiourea and CTAB, maintaining the temperature of a sample at a hydrothermal temperature of 220 DEG C for 24 hours, washing a product for five times by virtue of deionized water and ethanol, putting the product into a vacuum drying oven, and drying at a temperature of 60 DEG C, so as to obtain the molybdenum disulfide / copper sulfide / cuprous oxide nano-composite material. The molybdenum disulfide / copper sulfide / cuprous oxide nano-composite material prepared by virtue of a hydrothermal method has the characteristics of simple preparation process, good material crystallinity, high sample uniformity and the like. A formed nano-composite structure has semiconductor heterojunction features and is capable of inhibiting the compounding of light-generated electrons and holes and promoting the separation of the electrons and the holes, so that the nano-composite material has wide application prospects in the fields of photocatalysis and photovoltaic cells.

Description

technical field [0001] The invention relates to a method for preparing a molybdenum disulfide / copper sulfide / cuprous oxide nanocomposite material, which belongs to the field of low-dimensional composite material preparation. Background technique [0002] Molybdenum disulfide nanomaterials have a two-dimensional layered structure, with van der Waals forces between layers and sandwich structures formed by chemical bonds within the layers. At the same time, molybdenum disulfide is a semiconductor material with a forbidden band width of about 1.9eV and better absorption of visible light. Due to its special structure and electronic properties, it is widely used in photoelectric catalysis, lithium sodium ion secondary batteries, photovoltaics and other fields; intrinsic molybdenum disulfide nanomaterials are formed during the synthesis process due to the formation of intrinsic defects such as sulfur vacancies, thereby Exhibits the characteristics of an n-type semiconductor. Due ...

Claims

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Application Information

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IPC IPC(8): C01G39/06B82Y30/00B82Y40/00C01G3/02H01L31/0328B01J27/051
CPCH01L31/0328B82Y30/00B82Y40/00C01G3/02C01G39/06B01J27/051C01P2004/60C01P2002/72C01P2004/34C01P2004/03B01J35/39
Inventor 刘鑫桐史召邑胡陈力周冬袁洪涛梁培舒海波
Owner CHINA JILIANG UNIV
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