Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A Low Trigger Voltage Scr Structure Based on Floating Well Trigger

A low trigger voltage, floating technology, applied in circuits, electrical components, electrical solid devices, etc., can solve problems such as excessive trigger voltage

Active Publication Date: 2020-03-27
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the trigger voltage of the LVTSCR device is determined by the drain-source breakdown voltage BV of the P-channel MOSFET device DS decision; the trigger voltage is still too high for a low-voltage process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A Low Trigger Voltage Scr Structure Based on Floating Well Trigger
  • A Low Trigger Voltage Scr Structure Based on Floating Well Trigger
  • A Low Trigger Voltage Scr Structure Based on Floating Well Trigger

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0027] This embodiment provides a low trigger voltage SCR structure based on floating well trigger, such as figure 1 As shown, its structure includes:

[0028] p-type silicon substrate 110;

[0029] An n-type deep well region 140 is formed on the substrate 110;

[0030] An adjacent n-type well region 120 and a p-type well region 130 are formed on the n-type deep well region 140;

[0031] An n-type heavily doped region 121 and a p-type heavily doped region 122 are provided in the n-type well region 120, and the regions 121 and 122 are connected to the anode;

[0032] The p-type well region 130 is provided with an n-type heavily doped region 131 and a p-type heavily doped region 132, and the regions 131 and 132 are connected to the cathode;

[0033] A p-type heavily doped region 123 is bridged between the n-type well region 120 and the p-t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention belongs to the field of electrostatic discharge protection of integrated circuits, and specifically provides a low trigger voltage SCR structure based on floating well trigger for ESD protection, which is used to further reduce the trigger voltage of LVTSCR devices. The present invention introduces a floating well structure inside the device through internal structure design; the floating well structure is equivalent to a diode structure, its anode is connected to the polysilicon gate of PMOS, and the cathode is connected to the anode of SCR; when the ESD pulse When it arrives, the potential of the floating well is lower than the anode potential of the SCR device. When the potential difference between the two is enough to turn on the PMOS; after the P-channel MOSFET is turned on, it triggers the parasitic NPN transistor inside the SCR device to turn on, thereby triggering the parasitic The PNP transistor is turned on, and finally the SCR device is turned on to discharge the ESD current. Therefore, the trigger voltage of the device is determined by the floating well structure and the gate-source capacitance of the parasitic PMOS, which can achieve the purpose of reducing the trigger voltage of the SCR device, and the trigger voltage can be modulated.

Description

technical field [0001] The invention belongs to the field of electrostatic discharge (ESD: Electro-Static discharge) protection of integrated circuits, relates to an ESD protection structure device, in particular to a new silicon-controlled rectifier (SCR: Semiconductor Control Rectifier) ​​with low trigger voltage for ESD protection ) device structure. Background technique [0002] Electrostatic discharge is one of the important branches of integrated circuit reliability. From chip manufacturing to production assembly, from product transportation to daily use, electrostatic discharge is accompanied by the occurrence of electrostatic discharge during the entire life cycle of electronic products. According to statistics, more than one-third of electronic product failures are caused by ESD / EOS problems. Considering such a large quantity, designing ESD protection devices with superior performance has attracted more and more attention. [0003] In order to achieve the purpose ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/02H01L23/60H01L29/06
CPCH01L23/60H01L27/0248H01L27/0266H01L29/0611H01L29/0688
Inventor 刘继芝钱玲莉刘志伟
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com