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A kind of method of epitaxial growth yttrium iron garnet nano film

A technology of yttrium iron garnet and epitaxial growth, which is applied in the fields of nanostructure application, magnetic film to substrate application, cathode sputtering application, etc. It can solve the problems of simultaneous realization of nanometer thickness and perpendicular magnetic anisotropy, and achieve high Effect of Induced Magnetic Anisotropy

Active Publication Date: 2019-05-21
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Provides high induced magnetic anisotropy due to insurmountable strain relaxation, an approach that has not yet achieved simultaneous nanometer thickness and perpendicular magnetic anisotropy in pure yttrium iron garnet films

Method used

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  • A kind of method of epitaxial growth yttrium iron garnet nano film
  • A kind of method of epitaxial growth yttrium iron garnet nano film
  • A kind of method of epitaxial growth yttrium iron garnet nano film

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Embodiment 1

[0029] The steps adopted in this embodiment are as follows:

[0030] 1. Preparation of high-purity yttrium iron garnet (Y 3 Fe 5 o 12) and samarium gallium garnet (Sm 3 Ga 5 o 12 ) target. Set the distance between the target and the substrate as 6cm (this distance will affect the deposition rate). Place the SGGG substrate in a vacuum better than 4×10 -4 Pa vacuum chamber heated to 800-900 ℃ pretreatment.

[0031] 2. Fill the vacuum chamber with high-purity oxygen and adjust the air pressure to 20Pa;

[0032] 3. Under the condition that the substrate is 800-950°C, adjust the laser energy density to about 1.8J / cm 2 , with a pulse frequency of 6 Hz, using a focused pulsed laser beam to bombard a pre-fired samarium gallium garnet target to deposit a buffer layer. The growth thickness of the buffer layer was controlled to 2.5 nm by the number of laser pulses. In-situ annealing was performed for 30 minutes after deposition.

[0033] 4. Under the same conditions as in the...

Embodiment 2

[0037] The steps adopted in this embodiment are as follows:

[0038] 1. Preparation of high-purity yttrium iron garnet (Y 3 Fe 5 o 12 ) and samarium gallium garnet (Sm 3 Ga 5 o 12 ) target. Set the distance between the target and the substrate as 6cm (this distance will affect the deposition rate). Place the SGGG substrate in a vacuum better than 4×10 -4 Pa vacuum chamber heated to 800-900 ℃ pretreatment.

[0039] 2. Fill the vacuum chamber with high-purity oxygen and adjust the air pressure to 20Pa;

[0040] 3. Under the condition that the substrate is 800-950°C, adjust the laser energy density to ~2J / cm 2 , with a pulse frequency of 6 Hz, using a focused pulsed laser beam to bombard a pre-fired samarium gallium garnet target to deposit a buffer layer. The growth thickness of the buffer layer was controlled to 2.5 nm by the number of laser pulses. In-situ annealing was performed for 30 minutes after deposition.

[0041] 4. Under the same conditions as the previous...

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Abstract

The invention relates to a method for epitaxially growing an yttrium iron garnet nanometer thin film with perpendicular magnetic anisotropy. The method comprises the steps that a buffer layer is epitaxially grown on a substrate, and the yttrium iron garnet nanometer thin film is epitaxially grown on the buffer layer. The buffer layer is the material such as samarium gallium garnet, and the lattice constant of the material is between the substrate and yttrium iron garnet. The substrate can adopt doped and substituted samarium gallium garnet. A layer of material with the lattice constant larger than the yttrium iron garnet can be epitaxially grown on the yttrium iron garnet nanometer thin film so as to increase the strain degree in the perpendicular direction. Accordingly, by means of the buffer layer, the stress relaxation problem in the surface is solved, high induced magnetic anisotropy is obtained, and the high-quality epitaxial yttrium iron garnet nanometer thin film with the perpendicular magnetic anisotropy is finally obtained. The method has great significance for research and application of magneto-optical devices, microwave and spin electronic devices.

Description

technical field [0001] The invention belongs to the technical field of anisotropy regulation and control of magnetic materials, and in particular relates to a yttrium iron garnet (Y 3 Fe 5 o 12 , abbreviated as YIG) method to induce vertical anisotropy in nanofilms. Background technique [0002] Yttrium iron garnet is a ferromagnetic insulator with the smallest spin damping among known materials, so it has a long spin diffusion length and is an excellent carrier for studying spin transport properties. In addition, yttrium iron garnet has excellent magneto-optical properties and is commonly used in microwave devices. Ythmium iron garnet epitaxial films with perpendicular magnetic anisotropy have important applications in microwave devices and spintronics devices. In the past, liquid phase epitaxy (LPE) was the most commonly used preparation method to obtain yttrium iron garnet epitaxial films with high crystal quality and perpendicular magnetic anisotropy. However, LPE i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01F41/18H01F41/30
CPCH01F41/18H01F41/30
Inventor 杨金波付建波王常生刘顺荃杜红林韩景智
Owner PEKING UNIV
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