Preparation method of copper indium gallium diselenide film solar battery buffer layer

A technology of thin-film solar cells and copper indium gallium selenide, which is applied in the field of solar cells, can solve problems such as unfavorable, difficult to precisely control film layer growth, and damage to the absorbing layer, and achieve simple and easy process, saving production cost and space, and cost-effectiveness. The effect of dense and uniform film

Inactive Publication Date: 2017-05-31
CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The chemical water bath method is a wet preparation method, which is not conducive to matching with the dry preparation of other layers of CIGS batteries; the magnetron sputtering method is difficult to accurately control the growth of the film layer and may cause damage to the absorbing layer

Method used

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  • Preparation method of copper indium gallium diselenide film solar battery buffer layer

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Glass is used as the copper indium gallium selenide thin-film solar cell substrate 6, and after the substrate 6 of the Mo bottom electrode 5 and the CIGS absorption layer 4 plated is placed in the reaction chamber of the atomic layer deposition equipment, the reaction chamber is evacuated to 0.5Pa, heating the substrate to 130℃, diethylzinc, H 2 S, H 2 O was used as the precursor source of Zn, S and O respectively, and ZnO thin film and ZnS thin film were alternately deposited 300 times each on the heated substrate by atomic layer deposition method. A ZnO thin film deposition is directed to the reaction chamber of the atomic layer deposition equipment, using high-purity nitrogen as a carrier gas to introduce diethyl zinc for 0.7s, then purging the reaction chamber with high-purity nitrogen for 3s, and then introducing water vapor for 0.3s to deposit A single layer of ZnO was obtained, and then the reaction chamber was purged with high-purity nitrogen for 3 s. A ZnS th...

Embodiment 2

[0029] Glass is used as the copper indium gallium selenide thin-film solar cell substrate 6, and after the substrate 6 of the Mo bottom electrode 5 and the CIGS absorption layer 4 plated is placed in the reaction chamber of the atomic layer deposition equipment, the reaction chamber is evacuated to 0.3Pa, heating the substrate to 150℃, diethylzinc, H 2 S, H 2 O was used as the precursor source of Zn, S, and O respectively, and ZnO thin film and ZnS thin film were alternately deposited 500 times each on the heated substrate by atomic layer deposition method. A ZnO thin film deposition is directed to the reaction chamber of the atomic layer deposition equipment, using high-purity nitrogen as a carrier gas to introduce diethyl zinc for 1 second, then purging the reaction chamber with high-purity nitrogen for 10 seconds, and then introducing water vapor for 0.7 seconds. single layer of ZnO, and then purged the reaction chamber with high-purity nitrogen for 10 s. A ZnS thin film ...

Embodiment 3

[0031] Glass is used as the copper indium gallium selenide thin-film solar cell substrate 6, and after the substrate 6 of the Mo bottom electrode 5 and the CIGS absorption layer 4 plated is placed in the reaction chamber of the atomic layer deposition equipment, the reaction chamber is evacuated to 0.4Pa, heating the substrate to 120℃, diethylzinc, H 2 S, H 2 O was used as the precursor source of Zn, S, and O respectively, and ZnO thin film and ZnS thin film were alternately deposited 400 times on the heated substrate by atomic layer deposition method. A ZnO thin film deposition is directed to the reaction chamber of the atomic layer deposition equipment, using high-purity nitrogen as a carrier gas to introduce diethyl zinc for 0.5s, then purging the reaction chamber with high-purity nitrogen for 6s, and then introducing water vapor for 1s to deposit single layer of ZnO, and then purging the reaction chamber with high-purity nitrogen for 6 s. A ZnS thin film deposition is to...

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Abstract

The invention provides a preparation method of a copper indium gallium diselenide film solar battery buffer layer. The method comprises the following technical scheme: diethylzinc, H2S and H2O respectively serve as precursor sources of Zn, S and O; a ZnO film and a ZnS film are alternatively deposited multiply on a heated substrate through an atomic layer deposition method, so as to form a Zn (O, S) buffer layer. According to the method, the copper indium gallium diselenide film solar battery buffer layer prepared through a Zn (O, S) film through the atomic layer deposition method can be matched with a dry process preparation technology for other layers, the formed film is dense and even, is beneficial to the releasing of internal stress, and an absorption layer is not damaged during the preparation. Through the adjustment of the growth sequence and the growth thickness of ZnS and ZnO, copper indium gallium diselenide film solar battery buffer layers of Zn (O, S) films with different components can be realized, the technology is simple and practicable, the production cost is reduced, and space is saved.

Description

technical field [0001] The invention belongs to the technical field of solar cells, in particular to a preparation method of a copper indium gallium selenium thin film solar cell buffer layer. Background technique [0002] Today, copper indium gallium selenium thin film solar cells have good development prospects due to their low production cost, low environmental pollution, and good low-light performance. The typical structure of existing copper indium gallium selenide thin film solar cells is the following multilayer film structure: substrate / bottom electrode / absorbing layer / buffer layer / window layer / upper electrode. [0003] Copper indium gallium selenide thin film solar cells mostly use CdS thin film as the battery buffer layer, which can improve the energy band structure on the one hand, and protect the absorber layer during the buffer layer preparation process on the other hand. However, due to the strong toxicity of CdS and serious environmental pollution, and the sm...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/04H01L31/0352
CPCY02E10/50H01L31/18H01L31/0352H01L31/04
Inventor 张瀚铭乔在祥赵岳徐睿
Owner CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST
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