Surface processing method for wafers

Abstract

The invention relates to a surface processing method for wafers. The surface processing method comprises the following steps that a wafer is ground to obtain a ground wafer; the whole surface of the ground wafer is subjected to plasma etching to obtain an etched wafer; and the etched wafer is polished. According to the above surface processing method for the wafers, plasma etching is adopted after grinding and then polishing is performed, so that the wafer can be thinned rapidly; and besides, the surface state of the processed wafer is good, so that the whole processing process is short in time and high in efficiency, and the production efficiency of element production is favorably improved. Furthermore, stress accumulated in the grinding process and a surface damage layer of the wafer can be effectively and uniformly removed through plasma etching. Besides, difference between the surface roughness of the ground wafer and the surface roughness of the plasma etched wafer as well as between the surface roughness of the plasma etched wafer and the surface roughness of the polished wafer is small, so that a problem that difference between surface roughness of traditional fine grinding and surface roughness of polishing is large is avoided.

Description

technical field [0001] The invention relates to the fields of substrate material processing and device manufacturing, in particular to a wafer surface processing method. Background technique [0002] During substrate material processing and device manufacturing, it is sometimes necessary to thin the wafer and perform surface processing to reduce the thickness of the wafer and improve the surface morphology of the wafer. [0003] Generally, the processing flow of the substrate is as follows: the wafer is first roughly ground and finely ground, and then the ground wafer is polished. Due to the large leap in surface roughness from fine grinding to polishing, especially for crystal materials with high hardness such as sapphire, silicon carbide and gallium nitride, the above-mentioned processing flow method is time-consuming and inefficient. Contents of the invention [0004] Based on this, it is necessary to provide a short-time and high-efficiency wafer surface processing me...

AI Technical Summary

Problems solved by technology

[0004] Based on this, it is necessary to provide a short-time and high-efficiency wafer surface processing method for the problems of long time consumption and low efficiency in the existing wafer surface processing process.