A kind of manufacturing method of n-type bifacial battery

Abstract

The invention discloses a method of making an N-type double-sided battery. The method comprises the following steps: carrying out a front process on an N-type single-crystal silicon substrate; diffusing boron on the surface of the silicon substrate; carrying out wet etching and deboration silicon glass cleaning on the silicon substrate; diffusing phosphorus on the back of the silicon substrate; carrying out dephosphorization silicon glass cleaning on the silicon substrate; growing a passivation layer and depositing an antireflection layer on the front and back of the silicon substrate; and preparing positive and negative electrodes, thus completing the making of an N-type double-sided battery. The technical process from boron diffusion to phosphorus diffusion is simple in operation, and involves fewer steps. The use of conventional equipment can be maximized in production. Damage and pollution to the silicon substrate are reduced. The battery efficiency can be improved. Therefore, the cost of production is reduced significantly, and large-scale industrial production of the N-type battery is facilitated.

Description

technical field [0001] The invention relates to a production method of a solar battery, in particular to a production method of an N-type double-sided battery. Background technique [0002] N-type crystalline silicon cells are a type of solar cells. Compared with conventional P-type cells, N-type cells have the advantages of longer life, less light-induced attenuation, and better response to weak light, and have greater room for efficiency improvement. At the same time, N-type batteries can be made into double-sided light-transmitting batteries. In addition to absorbing light on the front side, the back side can also absorb ambient light to increase power output, making the power generation of the entire system higher. Therefore, it is regarded as a new generation of high-efficiency batteries. An important development direction of solar cells. [0003] In order to obtain a PN junction on the front and an N+ back electric field layer on the back, both the front and back of t...

AI Technical Summary

Problems solved by technology

Process a has the problem of many process steps, and needs to be etched twice, which will cause relatively large damage to the silicon wafer, and is likely to cause poor appearance, and the production cost is high; the ion implantation equipment used in process b is expensive and single-chip The process and production capacity are limited, the production cost is higher, and high temperature annealing treatment above 600°C is required after ion implantation. There are many process steps and high temperature treatment will cause damage to the silicon wafer, making the silicon wafer fragile

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