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Synthetic alkali, A-direction sapphire polishing solution and preparation method thereof

A polishing liquid and sapphire technology, applied in the field of gem and jade polishing, can solve the problems of low polishing rate, large TTV value of the wafer, and reduced polishing rate, so as to achieve the effect of increasing the polishing rate, ensuring the polishing rate, and maintaining stability

Active Publication Date: 2017-05-24
BEIJING GRISH HITECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the high hardness and high brittleness of A-oriented sapphire during processing, its mechanical processing is difficult. In the processing process, there are generally problems such as low polishing rate, high surface roughness of the wafer, and excessive TTV value of the overall wafer, which limits the A Towards the Sapphire Industry
[0004] In the prior art, a strong oxidizing agent or sodium hydroxide is generally used as a pH regulator for the polishing liquid for A-oriented sapphire, but the pH value of the polishing liquid is unstable during the processing, and the pH value of the polishing liquid will increase as the polishing progresses. Decrease step by step, resulting in a decrease in polishing rate, excessive TTV value of the wafer as a whole, etc.
In the prior art, there is also a plan to continuously add pH regulators during the polishing process, but it is difficult to control the amount added. Once the pH value is too high, the silica sol will be converted into soluble water, which will not achieve the grinding effect

Method used

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  • Synthetic alkali, A-direction sapphire polishing solution and preparation method thereof
  • Synthetic alkali, A-direction sapphire polishing solution and preparation method thereof
  • Synthetic alkali, A-direction sapphire polishing solution and preparation method thereof

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preparation example Construction

[0095] In a preferred embodiment of the present invention, the preparation method of the above-mentioned synthetic base comprises the following steps: first, add the first type of reactant and the second type of reactant into a ball mill tank and mix them uniformly, then add grinding balls, and ball mill the reaction 2 to 5 hours; then, add the third type of reactant to the slurry obtained after the reaction, and continue the ball milling reaction for 2 to 5 hours to obtain the synthetic base.

[0096] In the above-mentioned preferred embodiment, the first type of reactant is a solid powder at normal temperature, the first type of reactant and the second type of reactant are added into the ball mill tank for ball milling reaction for 2 to 5 hours, under the action of ball milling, produce With a certain amount of heat, the first type of reactant can be dissolved by heat, and then better mixed and reacted with the second type of reactant.

[0097] In the above-mentioned preferr...

Embodiment 1

[0143] The preparation method of the above-mentioned synthetic base in Example 1 is as follows: first, add the first type of reactant into the ball mill tank, then add the second type of reactant, and mix uniformly; then, add grinding balls into the above-mentioned uniformly stirred slurry, Ball milling reaction for 2 hours; finally, add the third type of reactant to the slurry after the ball milling reaction, and continue the ball milling reaction for 2 hours to obtain the synthetic base.

Embodiment 2

[0144] The preparation method of the above-mentioned synthetic base in Example 2 is as follows: first, add the first type of reactant into the ball mill tank, then add the second type of reactant, and mix uniformly; then, add grinding balls into the above-mentioned uniformly stirred slurry, Ball milling reaction for 5 hours; finally, add the third type of reactant to the slurry after the ball milling reaction, and continue the ball milling reaction for 5 hours to obtain the synthetic base.

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Abstract

The invention provides synthetic alkali, an A-direction sapphire polishing solution and a preparation method thereof, relates to the technical field of gem and jade polishing, and discloses the synthetic alkali, the A-direction sapphire polishing solution consisting of the synthetic alkali, silica sol, a surfactant, strong alkali, an inorganic salt, deionized water and the like, and the preparation method of the synthetic alkali and the A-direction sapphire polishing solution. By adopting the A-direction sapphire polishing solution, the problems that in the prior art the pH value of the polishing solution in the polishing process of A-direction sapphire is not stable, the pH value of the polishing solution is gradually reduced along with polishing, the polishing velocity is reduced, the TTV value of an overall wafer is too large can be solved, and the technical effects that hydroxyl can be relatively continuously released in the polishing process of the polishing solution, the pH value of the polishing solution can be stable and the polishing velocity and the stability of a polished surface can be finally ensured can be achieved.

Description

technical field [0001] The invention relates to the technical field of gem and jade polishing, in particular to a synthetic alkali, an A-direction sapphire polishing solution and a preparation method thereof. Background technique [0002] Sapphire, mineral name corundum, is a single crystal form of aluminum oxide (Al 2 o 3 ). Sapphire has good thermal properties, excellent transparency, excellent chemical stability, and can maintain extremely high strength at high temperatures. Therefore, a major application of sapphire materials is in the electronic information industry. In 2012, Apple first used sapphire After being applied to the camera cover of iPhone5, sapphire was applied to the home button protection cover of iPhone5s in September 2013, which increased the amount of sapphire by more than ten times. However, due to the high hardness of sapphire (second only to diamond), the processing technology is complex and difficult, and the requirements for the surface finish o...

Claims

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Application Information

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IPC IPC(8): C09G1/02
CPCC09G1/02
Inventor 苑亚斐许亚杰尹芳芳
Owner BEIJING GRISH HITECH
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