Method of making Schottky diode T-type anode contact air bridge electrode

A technology of Schottky diodes and manufacturing methods, which is applied in the manufacture of circuits, electrical components, semiconductors/solid-state devices, etc., can solve problems such as large parasitic capacitances, achieve small anode parasitic capacitances, and improve high-frequency characteristics

Active Publication Date: 2017-05-17
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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Problems solved by technology

[0004] The present invention proposes a manufacturing method of a Schottky diode T-type anode contacting an air bridge electrode, and its purpose is to overcome the problem of large parasitic capacitance caused by the introduction of silicon oxide or silicon nitride medium in the traditional Schottky diode anode process

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  • Method of making Schottky diode T-type anode contact air bridge electrode
  • Method of making Schottky diode T-type anode contact air bridge electrode
  • Method of making Schottky diode T-type anode contact air bridge electrode

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Embodiment Construction

[0019] The method for making a Schottky diode T-type anode contacting an air bridge electrode comprises the following steps:

[0020] 1) Spin-coat the first layer of photoresist on the lightly doped semiconductor epitaxial material, and photoetch the first layer of circular anode contact holes with a diameter of A;

[0021] 2) Spin-coat the second layer of photoresist on the first layer of photolithographic patterns, and photoetch the second layer of anode contact holes with a diameter of B, so that the center of the circle coincides with the center of the anode contact hole of the first layer of photolithography; B The diameter is greater than the A diameter;

[0022] 3) Evaporate the anode Schottky contact metal, and remove the two layers of photoresist with organic solvent acetone, and peel off the T-shaped anode contact metal at the same time;

[0023] 4) Spin-coat photoresist and photolithography, so that there is no photoresist in the anode contact hole and the pattern ...

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Abstract

The invention relates to a method of making a Schottky diode T-type anode contact air bridge electrode, comprising the following steps: making a diameter-A anode contact hole in a lightly doped semiconductor material by means of photo-etching; making a diameter-B anode contact hole in the diameter-A anode contact hole in an overlay manner; forming T-type anode contact metal through an evaporative stripping process; forming air bridge lower glue by means of photo-etching; forming air bridge upper glue by means of photo-etching; forming air bridge metal through an evaporative stripping process; and connecting the T-type anode contact metal with an anode electrode plate, thus completing the making of a Schottky diode T-type anode contact air bridge electrode. The advantage is that by using the method of making a T-type anode air bridge electrode, the parasite capacitance of anode electrodes can be reduced effectively, and the cutoff frequency of Schottky diodes can be improved.

Description

technical field [0001] The invention relates to a method for manufacturing Schottky diode electrodes, which belongs to the field of semiconductor devices. Background technique [0002] Terahertz (THz) science and technology is an emerging interdisciplinary subject and research hotspot that has developed rapidly in the past two decades, involving electromagnetics, optoelectronics, optics, semiconductor physics, materials science, biology, medicine and other sciences. The terahertz frequency band covers the 0.3THz~3THz frequency range of the electromagnetic spectrum, and is a wide-band electromagnetic radiation area with rich physical connotations. In almost all terahertz technology application systems, the terahertz receiving front-end is the core technology of the system, which completes the frequency conversion of terahertz signals. The terahertz subharmonic mixer is a key component of the terahertz receiving front end. At present, among the few types of mixers that can w...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/28H01L29/872
CPCH01L21/28H01L21/283H01L29/872
Inventor 牛斌吴少兵范道雨
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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