Pressure applying mechanism of polishing pad activator for CMP equipment and operating method thereof

Abstract

The invention relates to a pressure applying mechanism of a polishing pad activator for CMP equipment. The mechanism comprises a bearing assembly, a power arm assembly, a transmission assembly and a gas path assembly; a bearing isolating sleeve is mounted between two ball bearing end surfaces in the bearing assembly in a sleeving manner; a sealed loss-preventing sleeve is arranged between the inner end cover of a bearing at the lower end surface of an air cylinder and a position shaft; a seal ring is arranged between a flange disc of a rotary shaft and a combining end surface of the upper end surface of the air cylinder for sealing; a guiding hub hole matched with a guiding key of the rotary shaft is formed in an inner cavity of the piston shaft, an O-shaped seal ring and an opening magnetic ring are embedded onto the external end surface, a grinding wheel disc which is horizontally arranged is fixedly connected to the lower end surface, and a pressure sensor is fixedly connected to a bearing pedestal. According to the mechanism provided by the invention, the rotary shaft, the air cylinder and the piston shaft are matched with the seal ring and the O-shaped seal ring to form a sealed cavity which replaces a conventional air bag cavity, so that the resources are saved, the cost is lowered, the loss is small, the service life is long, the reliability is good, the precision is high, pressure can be controllable, and the yield of wafers is improved.

Description

technical field [0001] The invention relates to a polishing pad pressing mechanism, in particular to a polishing pad activator pressing mechanism for CMP equipment and an operating method thereof. Background technique [0002] In the semiconductor integrated circuit manufacturing industry, the wafer needs multiple chemical vapor deposition to form a dielectric layer in the process of manufacturing devices in the front process, and each deposition will increase the surface fluctuation of the dielectric layer on the original basis; Multiple times of chemical and physical vapor deposition are required to form metal layers. When there are more than 3 layers, it is basically impossible to form effective photolithography. Therefore, it is necessary to planarize the surface finish of each layer. Traditional integrated circuit planarization methods include: heat flow method, spin-on-glass method, etch-back method, and electron surround resonance method. Only local planarization of ...

AI Technical Summary

Problems solved by technology

[0005] The invention provides a polishing pad activator pressure-applying mechanism for CMP equipment and its operating method, which solves the problem of air bag wear and tear during frequent up and down movements when the air bag cavity is used to adjust the pressure on the polishing pad in the prior art. Large, short life, easy to deform, unstable position, resulting in unstable downforce supply, affecting the wafer yield, and greatly increasing the cost of the polishing process.

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