Forming device and method of low-expansion high-thermal-conductivity SiCp/Al composite

Abstract

The invention provides a forming device and method of low-expansion high-thermal-conductivity SiCp / Al composite. The device comprises a base. The base is connected with a beam through vertical pillars. A pressurization device is arranged in the middle of the base and connected with a heating furnace through a position adjusting cushion block. An upper pressing block is arranged on the heating furnace, the two ends of the heating furnace are connected with the vertical pillars through sliding holes correspondingly, and the upper end of the heating furnace is connected with balance weights in the base in a pulley guiding mode through suspension wires. An upper limiting stopper and a lower limiting stopper are arranged on each vertical pillar, and the sliding holes of the heating furnace are located between the upper limiting stoppers and the lower limiting stoppers. The low-expansion high-thermal-conductivity SiCp / Al composite is prepared and formed through links including powder mixing, cold pressing forming, atmosphere hot pressing sintering and the like, all the links are conducted under the atmosphere condition, and a vacuum link is not needed. By using the technology, the technique is simple, the process is short, efficiency is high, cost is low, and the forming device and method of the low-expansion high-thermal-conductivity SiCp / Al composite are very suitable for industrialized mass production.

Description

technical field [0001] The invention belongs to the technical field of powder metallurgy materials, and in particular relates to a low-expansion, high-thermal-conductivity SiCp / Al composite material forming equipment and method thereof. Background technique [0002] Existing large-scale integrated circuit substrates and high-power LED lamp substrates mainly use alumina material products or copper or even aluminum substrates. Ceramic substrates have equivalent thermal expansion properties to semiconductor chip materials, but their thermal characteristics of low thermal conductivity are becoming more and more important in design power. In high-end modern electronic products, it seriously hinders the heat loss of chips, which seriously affects the service life and stability of electronic products. According to the test of high-power LED industry, the general service life is only about 1-2 years. According to the 10-year The design life is very different; metal substrates such a...

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Problems solved by technology

The content of SiC in the material obtained by the former is often difficult to accurately control, and the dispersion uniformity of SiC is relatively poor, which easily leads to large dispersion of product performance; It is extremely inconvenient to place the billet and take out the cooked billet, which significantly increases the production cycle of the product, resulting in low production efficiency and is not conducive to industrial production. At the same time, due to the use of vacuum equipment, the equipment cost, maintenance cost, and labor cost are greatly increased. Hot pressing sintering is a common activation sintering method in the powder metallurgy process. In the existing powder metallurgy preparation process of high volume fraction silicon carbide particles reinforced aluminum matrix composites, vacuum hot pressing sintering is generally used. Although the obtained materials have excellent properties, However, at the same time, it brings disadvantages such as low production efficiency, high process cost, high maintenance cost, and high labor cost, which makes this method unsuitable for large-scale production and limits the industrial application of electronic packaging substrate products prepared by this method, especially for the vast Civil product field

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