SiC MOSFET driving circuit with crosstalk suppression capability

Abstract

The invention discloses a SiC MOSFET driving circuit with crosstalk suppression capability. The SiC MOSFET driving circuit comprises a switch tube S1 and a switch tube S2 which are in push-pull connection. A driving resistance is connected between the switch tube S1 and the switch tube S2. The output end of the driving resistor is connected with a first-stage crosstalk suppression circuit and a second-stage crosstalk suppression circuit which are connected in parallel. The first-stage crosstalk suppression circuit comprises a capacitor C1 and a diode D2 which are connected in parallel. The second-stage crosstalk suppression circuit comprises a BJT tube T, a resistor R3 which is connected between the base electrode of the BJT tube and an emitter electrode in a parallel manner, and capacitors C2 and C3 which are connected between the collector electrode of the BJT tube and the base electrode in the parallel manner. The resistor R3 and the capacitor C3 are output ends. The SiC MOSFET driving circuit prevents mis-conduction through switching on and switching off negative voltage and reduces a negative voltage peak through the crosstalk suppression circuits.

Description

technical field [0001] The invention relates to the field of power electronic drive circuits, in particular to a SiC MOSFET drive circuit capable of suppressing bridge arm crosstalk. Background technique [0002] In recent years, silicon carbide devices have developed rapidly, and have the advantages of high operating temperature, high blocking voltage, high operating frequency and low on-state loss, and are widely used in high voltage, high temperature, high efficiency and high power density occasions. Among them, SiC MOSFET has attracted extensive attention from academia and industry due to its advantages of high withstand voltage and high switching frequency. Although SiC MOSFET has excellent device characteristics, it is very difficult to design its driving circuit. First of all, the parasitic capacitance of SiC MOSFET is relatively small, and it is easily affected by the parasitic inductance in the circuit during actual operation, and serious oscillation may occur duri...

AI Technical Summary

Problems solved by technology

Bridge arm crosstalk is divided into two situations: first, when the upper tube is turned on, a positive pressure peak will be generated at both ends of the gate source of the lower tube, which may cause the lower tube to be misconducted, resulting in circuit failure; second, the upper tube is turned off At this time, a negative pressure peak will be generated at both ends of the gate source of the lower tube, which may exceed the safety threshold and cause the lower tube to break down

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